Related papers: Topological Exciton Bands in Moir\'e Heterojunctio…
Atomically-thin layers of two-dimensional materials can be assembled in vertical stacks held together by relatively weak van der Waals forces, allowing for coupling between monolayer crystals with incommensurate lattices and arbitrary…
Van der Waals heterostructures (vdWH) provide an ideal playground for exploring light-matter interactions at the atomic scale. In particular, structures with a type-II band alignment can yield detailed insight into free carrier-to-photon…
Interlayer excitons (IXs), composed of electron and hole states localized in different layers, excel in bilayers composed of atomically thin van der Waals materials such as semiconducting transition metal dichalcogenides (TMDs) due to…
Moir\'e superlattice-induced sub-bands in twisted van der Waals homo- and hetero-structures govern their optical and electrical properties, rendering additional degrees of freedom such as twist angle. Here, we demonstrate the moir\'e…
Twistronic assembly of 2D materials employs the twist angle between adjacent layers as a tuning parameter for designing the electronic and optical properties of van der Waals heterostructures. Here, we study how interlayer hybridization,…
Twisted atomically thin semiconductors are characterized by moir\'{e} excitons. Their optical signatures and selection rules are well understood. However, their hybridization with photons in the strong coupling regime for heterostructures…
Moir\'{e} twist angle underpins the interlayer interaction of excitons in twisted van der Waals hetero- and homo-structures. The influence of twist angle on the excitonic absorption of twisted bilayer tungsten diselenide (WSe$_{2}$) has…
Excitons in twisted bilayers of transition metal dichalcogenides have strongly modified dispersion relations due to the formation of periodic moir\'e potentials. The strong coupling to a light field in an optical cavity leads to the…
Van der Waals materials enable the construction of atomically sharp interfaces between compounds with distinct crystal and electronic properties. This is dramatically exploited in moir\'e systems, where a lattice mismatch or twist between…
We show that excitons forming between moir\'e flat Chern bands possess a substantial electric dipole moment comparable to the moir\'e lattice parameter times the elementary charge ($\sim10^2$ Debye). At a hole filling factor of one in…
Moir\'e transition metal dichalcogenide (TMD) materials provide an ideal playground for studying the combined interplay of strong interactions and band-topology over a range of electronic fillings. Here we investigate the panoply of…
Excitons in van der Waals (vdW) stacking interfaces can be trapped in ordered moire potential arrays giving rise to attractive phenomenons of quantum optics and bosonic many-body effects. Compare to the prevalent transition metal…
The control of elastic and inelastic electron tunneling relies on materials with well defined interfaces. Van der Waals materials made of two-dimensional constituents form an ideal platform for such studies. Signatures of acoustic phonons…
The functional form of Coulomb interactions in the transition metal dichalcogenides and other van der Waals solids is critical to many of their unique properties, e.g. strongly-correlated electron states, superconductivity and emergent…
Van der Waals heterostructures based on TMDC semiconducting materials have emerged as promising materials due to their spin-valley properties efficiently contrived by the stacking-twist angle. The twist angle drastically alters the…
Moir\'e heterostructures consisting of transition metal dichalcogenide (TMD) hetero- and homobilayers have emerged as a promising material platform to study correlated electronic states. Optical signatures of strong correlations in the form…
Moir\'e patterns with angular mismatch in van der Waals heterostructures composed of atomically thin semiconducting materials are a fascinating platform to engineer the optically generated excitonic properties towards novel quantum…
Van der Waals (vdW) materials provide a rich platform for exploring the interplay of interactions, topology, and paired-electron phases. We study how the Berry phase reshapes excitonic pairing in a double-well dispersion representative of…
Atomically thin heterostructures formed by twisted transition metal dichalcogenides can be used to create periodic moir\'e patterns. The emerging moir\'e potential can trap interlayer excitons into arrays of strongly interacting bosons,…
Interlayer excitons confined in bilayer heterostructures of transition metal dichalcogenides (TMDs) offer a promising route to implement two-dimensional dipolar superfluids. Here, we study the experimental conditions necessary for the…