Related papers: Scattering from spin-polarized charged impurities …
Broken symmetries in graphene affect the massless nature of its charge carriers. We present an analysis of scattering by defects in graphene in the presence of spin-orbit interactions (SOIs). A characteristic constant ratio ($\simeq 2$) of…
We measure the dependence of the conductivity of graphene as a function of magnetic field, temperature and carrier density and discover a saturation of the dephasing length at low temperatures that we ascribe to spin memory effects. Values…
We analyze spin scattering in ballistic transport of electrons through a ripple at a normal incidence of an electron flow. The model of a ripple consists of a curved graphene surface in the form of an arc of a circle connected from the…
Detailed experimental and theoretical studies of the temperature dependence of the effect of different scattering mechanisms on electrical transport properties of graphene devices are presented. We find that for high mobility devices the…
The equilibration length between spin-polarized edge states in the Quantum Hall regime is measured as a function of a gate voltage applied to an electrode on top of the edge channels. Reproducible fluctuations in the coupling are observed…
The luminescence caused by the interband transitions of hot carriers in graphene is considered theoretically. The dependencies of emission in mid- and near-IR spectral regions versus energy and concentration of hot carriers are analyzed;…
We investigate how spins relax in intrinsic graphene. The spin-orbit coupling arises from the band structure and is enhanced by ripples. The orbital motion is influenced by scattering centers and ripple-induced gauge fields. Spin relaxation…
We report calculations of spin relaxation dynamics of two-dimensional electron gas with spin-orbit interaction at the edge region. It is found that the relaxation of spin polarization near the edge is more slow than relaxation in the bulk.…
We present a microscopic theory of spin-orbit coupling in the integer quantum Hall regime. The spin-orbit scattering length is evaluated in the limit of long-range random potential. The spin-flip rate is shown to be determined by rare…
Spontaneous spin polarization of the electrical current flowing through nonmagnetic semiconductor junctions can be generated by carrier scattering processes that are independent of the carrier spin. The two required elements for…
The study of electron transport and scattering processes limiting electron mobility in high-quality semiconductor structures is central to solid-state electronics. Here, we uncover an unavoidable source of electron scattering which is…
Graphite has been intensively studied, yet its electron spins dynamics remains an unresolved problem even 70 years after the first experiments. The central quantities, the longitudinal ($T_1$) and transverse ($T_2$) relaxation times were…
The unusual electronic properties of single-layer graphene make it a promising material system for fundamental advances in physics, and an attractive platform for new device technologies. Graphene's spin transport properties are expected to…
A theoretical study is presented on the scattering of graphene surface plasmons by defects in the graphene sheet they propagate in. These defects can be either natural (as domain boundaries, ripples and cracks, among others) or induced by…
We determine the spin-lifetime anisotropy of spin-polarized carriers in graphene. In contrast to prior approaches, our method does not require large out-of-plane magnetic fields and thus it is reliable for both low- and high-carrier…
We measure spin transport in high mobility suspended graphene (\mu ~ 10^5 cm^2/Vs), obtaining a (spin) diffusion coefficient of 0.1 m^2/s and giving a lower bound on the spin relaxation time (\tau_s ~ 150 ps) and spin relaxation length…
We present a theoretical study of elastic spin-dependent electron scattering caused by a nonuniform Rashba spin-orbit coupling strength. Using the spin-generalized method of partial waves the scattering amplitude is exactly derived for the…
Quantum effects in weakly disordered systems are governed by the properties of the elementary interaction between propagating particles and impurities. Long range mesoscopic effects due to multiple scattering are derived by iterating the…
Detecting the carrier scattering mechanisms in a materials system is important for transport related science and engineering. The approaches of fast laser process and electrical conductivity matching were used in previous literature, which…
We present a general unifying theory for spin polarization decay due to the interplay of spin precession and momentum scattering that is applicable to both spin-1/2 electrons and spin-3/2 holes. Our theory allows us to identify and…