Related papers: Effect of Negative Pressure on the Prototypical It…

We have investigated the effect of Ge-substitution to the magnetic ordering in the B20 itinerant chiral magnet MnSi prepared by melting and annealing under ambient pressure. From metallurgical survey, the solubility limit of Ge was found to…

The itinerant quasi-ferromagnetic metal MnSi has been studied by detailed thermal expansion measurements under pressures and magnetic fields. A sudden decrease of the volume at the critical pressure Pc ~1.6 GPa has been observed and is in…

In [B. Binz, A. Vishwanath and V. Aji, Phys. Rev. Lett. 96, 207202 (2006)], a magnetic structure that breaks time reversal symmetry in the absence of net magnetization was proposed as an explanation for the high pressure "partially ordered"…

We have investigated anomalous Hall effect and magnetoresistance in a noncentrosymmetric itinerant magnet Cr$_{11}$Ge$_{19}$. While the temperature- and magnetic-field-dependent anomalous Hall conductivity is just proportional to the…

We investigated pressure effects on the nontrivial heavy-fermion antiferromagnet CeMnSi by means of electrical resistivity and powder X-ray diffraction. With increasing pressure, the antiferromagnetic order of Mn (T_N ~ 240 K at ambient…

Magnetic semiconductors are attracting high interest because of their potential use for spintronics, a new technology which merges electronics and manipulation of conduction electron spins. (GaMn)As and (GaMn)N have recently emerged as the…

The transport properties of massless fermions in $3+1$ spacetime dimension have been in the focus of recent theoretical and experimental research. New transport properties appear as consequences of chiral anomalies. The most prominent is…

The effect of hydrostatic pressure on the paramagnetic - ferromagnetic phase transition has been studied in (Ga,Mn)As. The variation of the Curie temperature (TC) with pressure was monitored by two transport methods: (1) - measurement of…

The compound, Tb5Si3, crystallizing in Mn5Si3-type hexagonal structure, was recently reported by us to exhibit a sudden and huge enhancement in electrical resistivity (rho) at a critical magnetic field (H_cr) in the magnetically ordered…

The electrical resistivity, anisotropic magnetoresistance (AMR), and anomalous Hall effect of ferromagnetic Mn5Ge3, Mn5Ge3C0.8, and Mn5Si3C0.8 thin films has been investigated. The data show a behavior characteristic for a ferromagnetic…

The anomalous Hall effect in metal-insulator-semiconductor structures having thin (Ga,Mn)As layers as a channel has been studied in a wide range of Mn and hole densities changed by the gate electric field. Strong and unanticipated…

We investigated the effect of high pressure on the field dependences of magnetoresistance (MR) in La_{0.8}Ag_{0.1}MnO_{3} near the metal-insulator transition temperature. Our results showed that an increase in pressure results in a decrease…

Mn site is substituted with closed shell ions (Al, Ga. Ti, Zr and a certain combination of Zr and Al) and also with Fe and Ru ions carrying the magnetic moment (S=5/2 and 2 respectively) at a fixed concentration of 5 at. %. Substitution did…

The magnetic, transport, and structural properties of (Ga,Cr)As are reported. Zincblende Ga$_{1-x}$Cr$_{x}$As was grown by low-temperature molecular beam epitaxy (MBE). At low concentrations, x$\sim$0.1, the materials exhibit unusual…

The magnetization M(H) has been measured in the weakly helimagnetic itinerant compound MnSi under high pressure up to 10.2 kbar and high magnetic field up to 9 Tesla. We interpret the simultaneous decrease under pressure of the saturated…

The archetype cubic chiral magnet MnSi is home to some of the most fascinating states in condensed matter such as skyrmions and a non-Fermi liquid behavior in conjunction with a topological Hall effect under hydrostatic pressure. Using…

A plethora of correlated and exotic metallic states have been identified on the border of itinerant magnetism, where the long-range spin texture is melted by tuning the magnetic transition temperature (T$_C$) towards zero, referred to as…

We report the effect of Mn site substitution of Al on the structural, magnetic and transport properties of charge ordered Pr{_0.5}Ca{_0.5}MnO{_3}. This substitution introduces impurities in the Mn-O-Mn network, causes the Mn{^3+}/Mn{^4+}…

Electronic transport and magnetic properties of Ge1-xMnx/Ge(100) films are investigated as a function of Mn dilution. Depending on x, characteristic temperatures separate different regimes in both properties. Resistivity exhibits an…

We report on electrical resistivity, magnetoresistance (MR) and Hall effect measurements in four non-superconducting BaFe$_{2-x}$TM$_x$As$_2$ (TM = Mn, Cu and Ni) single crystals with small values of the chemical substitution $x$. The spin…