Related papers: Charge puddles in a completely compensated topolog…
We present an exact solution of a modifed Dirac equation for topological insulator in the presence of a hole or vacancy to demonstrate that vacancies may induce bound states in the band gap of topological insulators. They arise due to the…
Topological Insulators (TIs) present an interesting materials platform for nanoscale, high frequency devices because they support high mobility, low scattering electronic transport within confined surface states. However, a robust…
The search for large band gap systems with dissipationless edge states is essential to developing materials that function under a wide range of temperatures. Two-dimensional (2D) topological insulators (TIs) have recently attracted…
Controlling the flow of spin and charge currents in topological insulators (TIs) is a crucial requirement for applications in quantum computation and spin electronics. We demonstrate that such control can be established in nanoscopic…
Surface states of topological insulators (TIs) have been playing the central role in the majority of outstanding investigations in low-dimensional electron systems for more than 10 years. TIs based on high-quality strained HgTe films…
An insulator-to-metal transition is observed in trilayer graphene based on the temperature dependence of the resistance under different applied gate voltages. At small gate voltages the resistance decreases with increasing temperature due…
The topological magnetoelectric effect (TME) in three-dimensional topological insulators (TIs), described by $\Delta P = \frac{e^2}{2h} N_{\rm Ch}^{(2)} \Delta B$, serves as a condensed-matter realization of the four-dimensional quantum…
The thermoelectric response of HgTe quantum wells in the state of two-dimensional topological insulator (2D TI) has been studied experimentally. Ambipolar thermopower, typical for an electron-hole system, has been observed across the charge…
Thin films of topological insulators (TI) usually exhibit multiple parallel conduction channels for the transport of electrical current. Beside the topologically protected surface states (TSS), parallel channels may exist, namely the…
The interaction between an electron and an elastic wave is investigated for HgTe and InAs-GaSb quantum wells. The well-known Bernevig-Hughes-Zhang model, i.e., the $4\times 4$ model for a two-dimensional (2D) topological insulator (TI), is…
Lattice defects such as stacking faults may obscure electronic topological features of real materials. In fact, defects are a source of disorder that can enhance the density of states and conductivity of the bulk of the system and they…
We provide a characterization of tunneling between coupled topological insulators in 2D and 3D under the influence of a ferromagnetic layer. We explore conditions for such systems to exhibit integer quantum Hall physics and localized…
Three-dimensional topological insulators (TIs) are a perfectly tuned quantum-mechanical machinery in which counter-propagating and oppositely spin-polarized conduction channels balance each other on the surface of the material. This…
Using the non-equilibrium Keldysh Green's function formalism, we investigate the effect of defects on the electronic structure and transport properties of two-dimensional topological insulators (TI). We demonstrate how the spatial flow of…
Charge density waves (CDWs) appear in numerous condensed matter platforms, ranging from high-Tc superconductors to quantum Hall systems. Despite such ubiquity, there has been a lack of direct experimental study on boundary states that can…
Topological insulators can be characterized alternatively in terms of bulk or edge properties. We prove the equivalence between the two descriptions for two-dimensional solids in the single-particle picture. We give a new formulation of the…
Certain insulating materials with strong spin-orbit coupling can conduct currents along their edges or surfaces. This phenomenon arises from the non-trivial topological properties of the electronic band-structure, and is somewhat similar to…
Topological Insulators are the best thermoelectric materials involving a sophisticated physics beyond their solid state and electronic structure. We show that exists a topological contribution to the thermoelectric effect that arise between…
The bulk-edge correspondence predicts that interfaces between topological insulators support robust currents. We prove this principle for PDEs that are periodic away from an interface. Our approach relies on semiclassical methods. It…
Topological insulators are characterized by specially protected conduction on their outer boundaries. We show that the protected edge conduction exhibited by 2-D topological insulators (and also Chern insulators) is independent of…