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We report on the design and demonstration of ultra-wide bandgap AlGaN polarization-graded field effect transistors with ultra-thin channels to enable excellent current density and high-frequency performance while significantly reducing…
Boron implantation with in-situ dynamic annealing is used to produce highly conductive sub-surface layers in type IIa (100) diamond plates for the search of a superconducting phase transition. Here we demonstrate that high-fluence MeV…
On-chip ultraviolet sources are of great interest for building compact and scalable atomic clocks, quantum computers, and spectrometers; however, few material platforms are suitable for integrated ultraviolet light generation. Of these…
Light-emitting diodes based on perovskite nanocrystals (PNCs-LEDs) have gained great interest for next-generation display and lighting technologies prized for their color purity, high brightness and luminous efficiency approaching the…
Extending plasmonics into the ultraviolet range imposes the use of aluminum to achieve the best optical performance. However, water corrosion is a major limiting issue for UV aluminum plasmonics, as this phenomenon occurs significantly…
We demonstrate electrically pumped III-nitride edge-emitting laser diodes (LDs) with nanoporous bottom cladding. The LD structure was grown by plasma-assisted molecular beam epitaxy. Highly doped 350 nm thick GaN:Si cladding layer with Si…
Electrical excitation of light using inelastic electron tunneling is a promising approach for the realization of ultra-compact on-chip optical sources with high modulation bandwidth. However, the practical implementation of these nanoscale…
Lanthanide-based upconversion nanoparticles (UCNPs) generally require high power laser excitation. Here we report wide-field upconversion microscopy at single-nanoparticle sensitivity using incoherent excitation of a 970-nm light-emitting…
We report accurate energetics of defects introduced in GaN on doping with divalent metals, focussing on the technologically important case of Mg doping, using a model which takes into consideration both the effect of hole localisation and…
Recent experiments have realized steady-state electrical injection of interlayer excitons in electron-hole bilayers subject to a large bias voltage. In the ideal case in which interlayer tunneling is negligibly weak, the system is in…
We demonstrate a tunneling and rectification behavior in bilayer graphene. A stepped dielectric top gate creates a spatially modulated electric field, which opens the band gap in the graphene and produces an insulating region at the p-n…
Electro-optic modulators are fundamental components in atomic physics experiments, including trapped-ion systems used in precision metrology and quantum computing. To enable scalable photonic integration, we design and analyze an integrated…
Manipulating electron quantum 1D channels is an important element in the field of quantum information due to their ballistic and phase coherence properties. In GaAs and graphene based two dimensional gas systems, these edge channels have…
Integrated coherent sources of ultra-violet (UV) light are essential for a wide range of applications, from ion-based quantum computing and optical clocks to gas sensing and microscopy. Conventional approaches that rely on UV gain materials…
Avalanche photodiode (APD) has been intensively investigated as a promising candidate to replace photomultiplier tubes (PMT) for weak light detection. However, in conventional APDs, a large portion of carrier energy drawn from the electric…
Recent advances in LED technology have allowed the development of high-brightness deep-UV LEDs with potential applications in water purification, gas sensing and as excitation sources in fluorescence microscopy. The emission pattern of an…
The hot-wall metal-organic chemical vapor deposition (MOCVD), previously shown to enable superior III-nitride material quality and high performance devices, has been explored for Mg doping of GaN. We have investigated the Mg incorporation…
Based on the transmission coefficient of tunneling electrons, we have presented tunneling current and conductivity across a square-potential barrier for both graphene and $\alpha$-$\mathcal{T}_3$ lattices under a linearly-polarized…
Gallium oxide (Ga2O3) is a wide-band-gap semiconductor promising for UV sensors and high power transistor applications, with Baliga's figure of merit that far exceeds those of GaN and SiC, second only to diamond. Engineering its band…
Hydrogen resist lithography using the tip of a scanning tunneling microscope (STM) is employed for patterning p-type nanostructures in silicon. For this, the carrier density and mobility of boron $\delta$-layers, fabricated by gas-phase…