Related papers: Continuous-wave Raman Lasing in Aluminum Nitride M…
We show that it is possible to realize simultaneous Raman lasing at two different frequencies using a double-$\Lambda$ system pumped by a bi-frequency field. The Raman lasers are phase-locked to one another, and the beat-frequency matches…
Aluminum nitride (AlN)-on-insulator has emerged as a promising platform for the realization of linear and non-linear integrated photonic circuits. In order to efficiently route optical signals on-chip, precise control over the interaction…
We report experimental demonstration of continuous-wave cascaded-harmonic generation and Raman lasing in a millimeter-scale lithium niobate whispering-gallery resonator pumped at a telecommunication-compatible infrared wavelength. Intensity…
Chalcogenide glass (ChG) is an attractive material for integrated nonlinear photonics due to its wide transparency and high nonlinearity, and its capability of being directly deposited and patterned on Silicon wafer substrates. It has a…
Silicon photonics has offered a versatile platform for the recent development of integrated optomechanical circuits. However, silicon is limited to wavelengths above 1100 nm and does not allow device operation in the visible spectrum range…
We report a Raman scattering study of nematic degrees of freedom in the iron-based superconductor parent compound BaFe$_2$As$_2$ under tunable uniaxial strain. We demonstrate that the polarization resolved arsenic (As) phonon intensity can…
Micro-Raman scattering and electron field emission characteristics of silicon nanowires (SiNWs) synthesized by metal assisted chemical etching (MACE) are investigated. Scanning electron microscopy images reveal the growth of well aligned…
We report on room temperature phonon-assisted whispering gallery mode (WGM) lasing in ZnO microwires. For WGM laser action on the basis of the low gain phonon scattering process high quality resonators with sharp corners and smooth facets…
This article presents a bulk acoustic wave (BAW) resonator with complementary switchable operation in the first and second thickness extensional modes (TE1 and TE2) at 7.04 and 13.4 GHz. Two ferroelectric scandium aluminum nitride…
Efficient solid-state photon emitters with longer operating lifetimes in the ultraviolet (UV) wavelength range are crucial for optoelectronic devices. However, finding suitable material candidates has been a significant challenge. Here, we…
An optical characterization tool of Raman spectroscopy with extremely weak scattering cross section tool is not popular to analyze scattered signal from a single nanostructure in the sub-diffraction regime. In this regard, plasmonic…
Controlling resonant Raman scattering in two-dimensional semiconductors typically requires tuning the excitation energy to match excitonic transitions. Here we show that mechanical deformation can achieve the same effect without changing…
Resonant Raman spectra of single layer WS$_{2}$ flakes are presented. A second order Raman peak (2LA) appears under resonant excitation with a separation from the E$^{1}_{2g}$ mode of only $4$cm$^{-1}$. Depending on the intensity ratio and…
This work presents a new acoustic MEMS resonator technology, dubbed Aluminum Nitride (AlN) Combined Overtone Resonator (COR), capable of addressing the filter requirements for the 5G mmWave spectrum in the 6-40GHz range. The COR exploits…
Aluminum nitride (AlN) is an emerging material for integrated quantum photonics due to its large $\chi^{(2)}$ nonlinearity. Here we demonstrate the hybrid integration of AlN on silicon nitride (SiN) photonic chips. Composite microrings are…
We report two new first-order Raman modes in the spectra of few-layer MoS$_2$ at 286~cm$^{-1}$ and 471~cm$^{-1}$ for excitation energies above 2.4~eV. These modes appear only in few-layer MoS$_2$; therefore their absence provides an easy…
We present Raman measurements of mono- and few-layer WS2. We study the monolayer A'1 mode around 420 cm(-1) and its evolution with the number of layers. We show that with increasing layer number there is an increasing number of possible…
We report Raman lasing and the optical analog of electromagnetically-induced-transparency (EIT) in a whispering-gallerymode (WGM) microtoroid resonator embedded in a low refractive index polymer matrix together with a tapered fiber coupler.…
We have performed polarized Raman scattering measurements on the newly discovered superconductor Nd(O,F)BiS$_2$ ($T_c = 4$ K). We observe 2 Raman active modes, with frequencies in accordance with first-principles calculations. One A$_{1g}$…
Implementing stimulated Raman scattering in a low-loss microresonator could lead to Raman lasing. Here, we report the demonstration of an efficient Raman laser with $>50 \%$ power efficiency in an integrated silicon carbide platform for the…