Related papers: Graphical analysis of Current-Voltage Characterist…
The electrical properties of thin TiO2 films have recently been extensively exploited towards enabling a variety for metal-oxide electron devices: unipolar/bipolar semiconductor devices and/or memristors. In such efforts, investigations on…
Variability in memristive devices based on h-BN dielectrics is studied in depth. Different numerical techniques to extract the reset voltage are described and the corresponding cycle-to-cycle variability is characterized by means of the…
A model for the current-voltage characteristic of the junction between an Ion-Sensitive-Membrane and an electrolyte solution is derived and compared with numerical simulations of the Poisson-Nernst-Planck model for ion transport. The…
The electronic properties of interfaces between two different solids can differ strikingly from those of the constituent materials. For instance, metallic conductivity, and even superconductivity, have been recently discovered at interfaces…
The Immersed Interface Method is employed to solve the time-varying electric field equations around a three-dimensional vesicle. To achieve second-order accuracy the implicit jump conditions for the electric potential, up to the second…
We show that the nonlinear I-V characteristics of mesoscopic samples with metallic conductivity should contain parts which are linear in the magnetic field and quadratic in the electric field. These contributions to the current are entirely…
Memristive circuit elements constitute a cornerstone for novel electronic applications, such as neuromorphic computing, called to revolutionize information technologies. By definition, memristors are sensitive to the history of electrical…
Flexible and biocompatible memristive devices are particularly attractive for bioelectronic systems due to the interest in improving computing capabilities and the motivation to interface electronics with biological systems including drug…
Advanced neural interfaces mediate a bio-electronic link between the nervous system and microelectronic devices, bearing great potential as innovative therapy for various diseases. Spikes from a large number of neurons are recorded leading…
We identify experimental signatures in the current-voltage (I-V) characteristics of weakly contacted molecules directly arising from excitations in their many electron spectrum. The current is calculated using a multielectron master…
The current-voltage characteristics of superconductors are commonly determined by means of a standard 4-probe DC measurement technique. In coated conductors, however, one often encounters problems due to weak or no stabilization and in such…
The current-voltage ($I$-$V$) characteristics of break junctions of polycrystalline La$_{1.85}$Sr$_{0.15}$CuO$_4$, Y$_{0.75}$Lu$_{0.25}$Ba$_2$Cu$_3$O$_{7-\delta}$, Bi$_{1.8}$Pb$_{0.3}$Sr$_{1.9}$Ca$_2$Cu$_3$O$_x$ and composite…
Atom specific valence electronic structures at interface are elucidated successfully using soft x-ray absorption and emission spectroscopy. In order to demonstrate the versatility of this method, we investigated SiO2/Si interface as a…
The proposed protocol is an attempt to meet the experimentalists' legitimate desire of reliably and easily extracting microscopic parameters from current-voltage measurements on molecular junctions. It applies to junctions wherein charge…
Thermal transient measurement based on source-drain voltage is a standard method to characterize thermal properties of silicon semiconductors but is doubtful to be directly applied to silicon carbide (SiC) devices. To evaluate its…
Currently, memristor devices suffer from variability between devices and from cycle to cycle. In this work, we study the impact of device variations on memristive Material Implication (IMPLY). New constraints for different parameters and…
10 MeV proton-irradiation effects on a YBCO-based test structure were analyzed by measuring its current-voltage (IV) characteristics for different cumulated fluences. For fluences of up to $\sim$80$\cdot$10$^9$~p/cm$^2$ no changes in the…
In order to develop a method to extract the parameters of the two inherent Schottky contacts from a single current-voltage (I-V) characteristic curve, the I-V characteristics of metal-semiconductor-metal (MSM) diodes with asymmetric…
We use Monte Carlo simulations to examine the simplest model of an ionic liquid, called the restricted primitive model, at a metal surface. We find that at moderately low temperatures the capacitance of the metal/ionic liquid interface is…
Resistive-switching -- the current-/voltage-induced electrical resistance change -- is at the core of memristive devices, which play an essential role in the emerging field of neuromorphic computing. This study is about resistive switching…