Related papers: Optical transitions in two-dimensional topological…
We study in-gap electronic states induced by a nonmagnetic defect with short-range potential in two-dimensional topological insulators and trace their evolution as the distance between the defect and the boundary changes. The defect located…
We found that non-magnetic defects in two-dimensional topological insulators induce bound states of two kinds for each spin orientation: electron- and hole-like states. Depending on the sign of the defect potential these states can be also…
We study the energy spectra of bound states in quantum dots (QDs) formed by an electrostatic potential in two-dimensional topological insulator (TI) and their transformation with changes in QD depth and radius. It is found that, unlike a…
The 2D HgTe quantum well is analyzed based on the assumption that the width fluctuations convert the system to a random mixture of domains with positive and negative energy gaps. The borders between ordinary and topological insulator phases…
Two-dimensional topological insulator features time-reversal-invariant spin-momentum-locked one-dimensional (1D) edge states with a linear energy dispersion. However, experimental access to 1D edge states is still of great challenge and…
An important characteristic of topological band insulators is the necessary presence of in-gap edge states on the sample boundary. We utilize this fact to show that when the boundary is reconnected with a twist, there are always zero-energy…
Two-dimensional (2D) topological electronic insulators are known to give rise to gapless edge modes, which underlie low energy dynamics, including electrical and thermal transport. This has been thoroughly investigated in the context of…
We present a general analysis of two-dimensional optical lattice models that give rise to topologically non-trivial insulating states. We identify the main ingredients of the lattice models that are responsible for the non-trivial…
Topological insulators are states of matter distinguished by the presence of symmetry protected metallic boundary states. These edge modes have been characterised in terms of transport and spectroscopic measurements, but a thermodynamic…
We perform linear and non-linear photon absorption calculations in topological insulator ultra-thin films on a substrate. Due to the unique band structure of the coupled topological surface states, novel features are observed for suitable…
We present an exact solution of a modifed Dirac equation for topological insulator in the presence of a hole or vacancy to demonstrate that vacancies may induce bound states in the band gap of topological insulators. They arise due to the…
We discuss optical absorption in topological insulators and study possible photoelectric effects theoretically. We found that absorption of circularly polarized electromagnetic waves in two-dimensional topological insulators results in…
We study bound states embedded into the continuum of edge states in two-dimensional topological insulators. These states emerge in the presence of a short-range potential of a structural defect coupled to the boundary. In this case the edge…
Topological phases of matter have garnered significant interest over the past two decades for two main reasons: their identification, via topological invariants, relies on the quantum geometry of the Bloch states, bringing attention to an…
Topological insulators in the Bi2Se3 family have an energy gap in the bulk and a gapless surface state consisting of a single Dirac cone. Low frequency optical absorption due to the surface state is universally determined by the fine…
Defects usually play an important role in tuning and modifying various properties of semiconducting or insulating materials. Therefore we study the impact of point and line defects on the electronic structure and optical properties of MoS2…
The light absorption due to the transitions between the edge and two-dimensional (2D) states of a 2D topological insulator (TI) is considered in the Volkov-Pankratov model. It is shown that the transitions are allowed only for the in-plane…
One of the basic optoelectronic characteristics is the absorption of any optoelectronic device or material. We present the characteristics of pure GaAs and the deviation of ideal spectra. Due to crystal defects, vacancies, impurities, etc.,…
Three dimensional topological insulators are bulk insulators with $\mathbf{Z}_2$ topological electronic order that gives rise to conducting light-like surface states. These surface electrons are exceptionally resistant to localization by…
Excitons, bound states of electrons and holes, are affected by the properties of the underlying band structure of a material. Defects in lattice systems may trap electronic defect states, to which an electron can be excited to form…