Related papers: Inter-Edge Backscattering in Buried Split-Gate-Def…
We have developed a device fabrication process to pattern graphene into nanostructures of arbitrary shape and control their electronic properties using local electrostatic gates. Electronic transport measurements have been used to…
We present a device architecture of hybrid-edge and dual-gated quantum point contact. We demonstrate improved electrostatic control over the separation, position, and coupling of each broken-symmetry compressible strip in graphene. Via…
We demonstrate that the carrier concentration of epitaxial graphene devices grown on the C-face of a SiC substrate is efficiently modulated by a buried gate. The gate is fabricated via the implantation of nitrogen atoms in the SiC crystal,…
We study graphene quantum point contacts (QPC) and imaging of the backscattering of the Fermi level wave function by potential introduced by a scanning probe. We consider both etched single-layer QPCs as well as the ones formed by bilayer…
We propose a quantum gate architecture that allows for the systematic control of the effective exchange interactions between magnetic impurities embedded in nano-scale graphene flakes connected by a gated bridge. The entanglement between…
Using local scanning electrical techniques we study edge effects in side-gated Hall nanodevices made of epitaxial graphene. We demonstrate that lithographically defined edges of the graphene channel exhibit hole conduction within the narrow…
The quantum Hall effect is a remarkable manifestation of quantized transport in a two-dimensional electron gas. Given its technological relevance, it is important to understand its development in realistic nanoscale devices. In this work we…
Trilayer graphene allows systematic control of its electronic structure through stacking sequence and twist geometry, providing a versatile platform for correlated states. Here we report magnetotransport in alternating twisted trilayer…
Due to Klein tunneling in graphene only quasi-bound states are realized in graphene quantum dots by electrostatic gating. Particles in the quasi-bound states are trapped inside the dot for a finite time and they keep bouncing back and forth…
The present paper corresponds to the third work of the author related to the magnetotransport properties concerning on the graphene systems. In the first one the integer quantum Hall effect in the monolayer graphene, (MG), MGIQHE, was…
Quantum Hall effect (QHE), the ground to construct modern conceptual electronic systems with emerging physics, is often much influenced by the interplay between the host two-dimensional electron gases and the substrate, sometimes predicted…
We report on transport measurements of dual-gated, single-layer graphene devices in the quantum Hall regime, allowing for independent control of the filling factors in adjoining regions. Progress in device quality allows us to study…
We report on quantum-interference measurements in top-gated Hall bars of monolayer graphene epitaxially grown on the Si face of SiC, in which the transition from negative to positive magnetoresistance was achieved varying temperature and…
Confined to a two-dimensional plane, electrons in a strong magnetic field travel along the edge in one-dimensional quantum Hall channels that are protected against backscattering. These channels can be used as solid-state analogues of…
Band gap engineering in graphene may open the routes towards transistor devices in which electric current can be switched off and on at will. One may, however, ask if a semiconducting band gap alone is sufficient to quench the current in…
We have investigated the magnetotransport properties of a single-layer graphene Hall bar with additional graphene side gates. The side gating in the absence of a magnetic field can be modeled by considering two parallel conducting channels…
We exploit the biased tip of a scanning gate microscope (SGM) to induce a controlled backscattering between counter-propagating edge channels in a wide constriction in the quantum Hall regime. We compare our detailed conductance maps with a…
Scanning gate microscopy is used to locally investigate electron transport in a high-mobility two-dimensional electron gas formed in a GaAs/AlGaAs heterostructure. Using quantum point contacts (QPC) we observe branches caused by electron…
We use an atomic force microscope tip as a local gate to study the scattering between edge channels in a 2D electron gas in the quantum Hall regime. The scattering is dominated by individual, microscopic scattering centers, which we…
Quantum electron transport in side-gated graphene Hall bars is investigated in the presence of quantizing external magnetic fields. The asymmetric potential of four side-gates distorts the otherwise flat bands of the relativistic Landau…