Related papers: Engineering quantum spin Hall insulators by strain…
Quantum Spin Hall (QSH) insulators possess distinct helical in-gap states, enabling their edge states to act as one-dimensional conducting channels when backscattering is prohibited by time-reversal symmetry. However, it remains challenging…
Recently the Quantum Spin Hall effect (QSH) was theoretically predicted and experimentally realized in a quantum wells based on binary semiconductor HgTe[1-3]. QSH state and topological insulators are the new states of quantum matter…
Physical phenomena driven by topological properties, such as the quantum Hall effect, have the appealing feature to be robust with respect to external perturbations. Lately, a new class of materials has emerged manifesting their topological…
Quantum Spin Hall Insulators (QSHI) have been extensively studied both theoretically and experimentally because they exhibit robust helical edge states driven by spin-orbit coupling and offer the potential for applications in spintronics…
Quantum spin Hall insulators (QSHIs) and excitonic insulators (EIs) are prototypical topological and correlated states of matter, respectively. The topological phase transition between the two has attracted much theoretical interest but…
Topologically protected edge channels show prospects for quantum devices. They have been found experimentally in two-dimensional (2D) quantum spin Hall insulators (QSHIs), weak topological insulators and higher-order topological insulators…
Quantum spin Hall insulators (QSHI) have been proposed to power a number of applications, many of which rely on the possibility to switch on and off the non-trivial topology. Typically this control is achieved through strain or external…
Quantum spin Hall (QSH) insulators are materials that feature an insulating bulk and host edge states protected by time-reversal symmetry. The helical locking of spin and momentum in these states suppresses backscattering of charge…
Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band-gaps of about 10--18~meV. The former however features a band-gap vanishing with temperature, while the gap in…
The quantum spin Hall (QSH) states discovered in an inverted band of InAs/GaSb and HgTe/CdTe quantum wells categorize them among the very superior candidates for topological insulators. In the presence of a magnetic field, these QSH states…
The experiments in quantum spin Hall insulator candidate materials, such as HgTe/CdTe and InAs/GaSb heterostructures, indicate that in addition to the topologically protected helical edge modes these multilayer heterostructures may also…
In this work, we predict the emergence of a quantum spin Hall insulator (QSHI) in conventional semiconductors, specifically InAs quantum wells, driven by a built-in polarization field. We propose QSHI InAs quantum wells as a platform to…
The search for topologically non-trivial states of matter has become an important goal for condensed matter physics. Recently, a new class of topological insulators has been proposed. These topological insulators have an insulating gap in…
Quantum spin Hall (QSH) effect is promising for achieving dissipationless transport devices due to the robust gapless states inside insulating bulk gap. Here, by using first-principles calculations, we discover group-IV chalcogenide Si2Te2…
A Quantum Spin-Hall Insulator (QSHI) is implemented into a simple mass-spring Kagome lattice. The transition from the trivial state to the topological one is described by an invariant Chern number function of a contrast parameter. The band…
A two-dimensional (2D) topological insulator (TI) exhibits the quantum spin Hall (QSH) effect, in which topologically protected spin-polarized conducting channels exist at the sample edges. Experimental signatures of the QSH effect have…
Two-dimensional (2D) topological insulators (TIs) are promising platforms for low-dissipation spintronic devices based on the quantum spin Hall (QSH) effect, but experimental realization of such systems with a large band gap suitable for…
Quantum spin Hall (QSH) insulators are two-dimensional electronic materials that have a bulk band gap like an ordinary insulator but have topologically protected pairs of edge modes of opposite chiralities. To date, experimental studies…
Heterostructures between two-dimensional quantum spin Hall insulators (QSHI) and superconducting materials can allow for the presence of Majorana Fermions at their conducting edge states. Although a strong interface hybridization helps…
A large bulk band gap is critical for the applications of quantum spin hall (QSH) insulators in spintronics at room temperature. Based on first-principles calculations, we predict that the methyl-functionalized III-Bi monolayers, namely…