Related papers: Evidence for a Strong Topological Insulator Phase …
ZrTe$_5$ and HfTe$_5$ have attracted increasingly attention recently since the theoretical prediction of being topological insulators (TIs). However, subsequent works show many contradictions about their topological nature.Three possible…
Two-dimensional (2D) topological insulators (TIs) with a large bulk band-gap are promising for experimental studies of the quantum spin Hall effect and for spintronic device applications. Despite considerable theoretical efforts in…
Although, the long-standing debate on the resistivity anomaly in ZrTe$_{5}$ somewhat comes to an end, the exact topological nature of the electronic band structure remains elusive till today. Theoretical calculations predicted that bulk…
We report an atomic-scale characterization of ZrTe$_5$ by using scanning tunneling microscopy. We observe a bulk bandgap of ~80 meV with topological edge states at the step edge, and thus demonstrate ZrTe$_5$ is a two dimensional…
A quantum spin Hall insulator hosts topological states at the one-dimensional edge, along which backscattering by nonmagnetic impurities is strictly prohibited and dissipationless current flows. Its 3D analogue, a weak topological insulator…
We have performed a systematic high-momentum-resolution photoemission study on ZrTe$_5$ using $6$ eV photon energy. We have measured the band structure near the $\Gamma$ point, and quantified the gap between the conduction and valence band…
ZrTe$_5$ is a newly discovered topological material. Shortly after a single layer ZrTe$_5$ had been predicted to be a two-dimensional topological insulator, a handful of experiments have been carried out on bulk ZrTe$_5$ crystals, which…
Topological insulators have been studied intensively over the last decades. Among these materials, three-dimensional (3D) zirconium pentatelluride (ZrTe$_5$) stands out as one of the most intriguing for both theoretical and experimental…
Three-dimensional topological insulators (3D TIs) represent novel states of quantum matters in which surface states are protected by time-reversal symmetry and an inversion occurs between bulk conduction- and valence-bands. However, the…
Based on density functional theory (DFT), we investigate the electronic properties of bulk and single-layer ZrTe$_4$Se. The band structure of bulk ZrTe$_4$Se can produce a semimetal-to-topological insulator (TI) phase transition under…
High-resolution time- and angle-resolved photoemission measurements were conducted on the topological insulator ZrTe5. With strong femtosecond photoexcitation, a possible ultrafast phase transition from a weak to a strong topological…
Topological materials host robust properties, unaffected by microscopic perturbations, owing to the global topological properties of the bulk electron system. Materials in which the topological invariant can be changed by easily tuning…
For materials near the phase boundary between weak and strong topological insulators (TIs), their band topology depends on the band alignment, with the inverted (normal) band corresponding to the strong (weak) TI phase. Here, taking the…
The layered van der Waals material ZrTe$_5$ is known as a candidate topological insulator (TI), however its topological phase and the relation with other properties such as an apparent Dirac semimetallic state is still a subject of debate.…
The topological materials have attracted much attention recently. While three-dimensional topological insulators are becoming abundant, two-dimensional topological insulators remain rare, particularly in natural materials. ZrTe5 has host a…
We present an infrared spectroscopy study of ZrTe$_5$, which confirms a recent theoretical proposal that this material exhibits a temperature-driven topological quantum phase transition from a weak to a strong topological insulating state…
We study the effects of temperature on the topological nature of ZrTe$_5$, which sits near the phase boundary between strong and weak topological insulating orders. Using first-principles calculations, we show that the band gap and the…
HgTe is a versatile topological material and has enabled the realization of a variety of topological states, including two- and three-dimensional (3D) topological insulators and topological semimetals. Nevertheless, a quantitative…
The bulk band structure of the topological insulator \sbte~ is investigated by angle-resolved photoemission spectroscopy. Of particular interest is the dispersion of the uppermost valence band with respect to the topological surface state…
We investigated the electronic properties of the topological insulator Bi$_{2}$Te$_{3}$ by scanning tunneling microscopy and spectroscopy at low temperature. We obtained high-resolution quasiparticle interference data of the topological…