Related papers: Compensated ferrimagnetic tetragonal Heusler thin …
Fully-compensated ferrimagnets exhibit zero net magnetic moment yet display non-relativistic global spin splitting, making them highly advantageous for constructing high-performance spintronic devices. The general strategy is to break the…
We present a synthesis/processing method for fabricating ferrimagnetic insulator (Bi-doped yttrium iron garnet) thin films with tunable magnetic anisotropy. Since the desired magnetic properties rely on controllable thickness and successful…
The compensated magnetic order and characteristic, terahertz frequencies of antiferromagnetic materials makes them promising candidates to develop a new class of robust, ultra-fast spintronic devices. The manipulation of antiferromagnetic…
We report the compositional and temperature dependence of magnetic compensation in amorphous GdFeCo films. Magnetic compensation is attributed to the competition between antiferromagnetic coupling of rare-earth with transition-metal (TM)…
Two-dimensional (2D) multiferroic materials with controllable magnetism have promising prospects in miniaturized quantum device applications, such as high-density data storage and spintronic devices. Here, using first-principles…
Spintronics in ferromagnetic metals is built on a complementary set of phenomena in which magnetic configurations influence transport coefficients and transport currents alter magnetic configurations. In this Letter we propose that…
Memristors are emerging as key electronic components that retain resistance states without power. Their non-volatile nature and ability to mimic synaptic behavior make them ideal for next-generation memory technologies and neuromorphic…
We report the theoretical prediction of a new class of spintronic materials, namely bipolar magnetic semiconductor (BMS), which is also supported by our experimental data. BMS acquires a unique band structure with unequal band gaps for spin…
Antiferromagnetic materials promise improved performance for spintronic applications, as they are robust against external magnetic field perturbations and allow for faster magnetization dynamics compared to ferromagnets. The direct…
Spintronics uses spins, the intrinsic angular momentum of electrons, as an alternative for the electron charge. Its long-term goal is in the development of beyond-Moore low dissipation technology devices. Recent progress demonstrated the…
Although both theoretical predications and experimental observations demonstrated that the damping factor is anisotropic at ferromagnet/semiconductor interface with robust interfacial spin-orbit coupling, it is not well understood whether…
Terahertz emission spectroscopy (TES) has recently played an important role in unveiling the spin dynamics at a terahertz (THz) frequency range. So far, ferromagnetic (FM)/nonmagnetic (NM) heterostructures have been intensively studied as…
Ferromagnetic insulating garnet films with perpendicular magnetic anisotropy (PMA) are of great importance for the applications in spintronics. Tm3Fe5O12 (TmIG) with magnetoelastic anisotropy has been proven to exhibit PMA more easily than…
By studying coupled ferro- (FM) and antiferromagnetic (AFM) thin film systems, we obtain an in-plane magnetic reorientation as a function of temperature and FM film thickness. The interlayer exchange coupling causes a uniaxial anisotropy,…
Multiferroic composite materials, consisting of coupled ferromagnetic and piezoelectric phases, are of great importance in the drive towards creating faster, smaller and more energy efficient devices for information and communications…
The realization of topological antiferromagnetic (AFM) solitons in real materials is a major goal towards their use in information technology. While they bear various advantages with respect to their ferromagnetic cousins, their observation…
Antiferromagnetic Kagome semimetals have attracted tremendous attentions for their potential application in antiferromagnetic topological spintronics. Effectively manipulating Kagome antiferromagnetic states could reveal abundant physical…
Recent experimental work on Mn2RuxGa demonstrates its potential as a compensated ferrimagnetic half-metal (CFHM).Here we present a set of high-throughput ab initio density functional theory calculations and detailed experimental…
A rapidly developing field of spintronics is based on the premise that substituting charge with spin as a carrier of information can lead to new devices with lower power consumption, non-volatility and high operational speed. Despite…
Antiferromagnetic transition metal oxides are an established and widely studied materials system in the context of spin-based electronics, commonly used as passive elements in exchange bias-based memory devices. Currently, major interest…