Related papers: Trapping Centers at the Superfluid-Mott-insulator …
Mottness is at the heart of the essential physics in a strongly correlated system as many novel quantum phenomena occur in the metallic phase near the Mott metal-insulator transition. We investigate the Mott transition in a Hubbard model by…
In this work, the threshold voltage instability of normally-off p-GaN high electron mobility transistors (HEMTs) has been investigated by monitoring the gate current density during device on-state. The origin of the gate current variations…
We study the phase diagram of a one-dimensional extended Hubbard model with antiferromagnetic exchange interaction analytically and numerically. The bosonization and transfer-matrix renormalization group methods are used in the…
Recent experimental studies on strongly disordered indium oxide films have revealed an unusual first-order quantum phase transition between the superconducting and insulating states (SIT). This transition is characterized by a discontinuous…
Under hydrostatic pressure, the ground state of a two-dimensional electron gas at $\nu=5/2$ changes from a fractional quantum Hall state to the stripe phase. By measuring the energy gap of the fractional quantum Hall state and of the onset…
Several experimental and theoretical studies indicate the existence of a critical point separating the underdoped and overdoped regions of the high-T_c cuprates' phase diagram. There are at least two distinct proposals on the critical…
When electrons in a solid are excited to a higher energy band they leave behind a vacancy (hole) in the original band which behaves like a positively charged particle. Here we predict that holes can spontaneously order into a regular…
The coexistence of superfluid and Mott insulator, due to the quadratic confinement potential in current optical lattice experiments, makes the accurate detection of the superfluid-Mott transition difficult. Studying alternative trapping…
The deconfined quantum critical point, a prototype Landau-forbidden transition, could exist in principle in the phase transitions involving symmetry protected topological phase, however, examples of such kinds of transition in physical…
At total filling factor $\nu=1$ quantum Hall bilayers can have an ordered ground state with spontaneous interlayer phase coherence. The ordered state is signaled experimentally by dramatically enhanced interlayer tunnel conductances at low…
We suggest universal expressions for the rates of charge transition between molecules in organic disordered semiconductors, which differ between electrons and holes. The donor and acceptor molecules (monomers) are represented in terms of…
The entanglement entropy of a pure quantum state of a bipartite system $A \cup B$ is defined as the von Neumann entropy of the reduced density matrix obtained by tracing over one of the two parts. Critical ground states of local…
We present an extensive analysis of the trapping processes induced by drain bias stress in AlGaN/GaN high-electron-mobility transistors (HEMTs) with p-GaN gate. We demonstrate that: (i) with increasing drain stress, pulsed I-V and VTH…
An integer Quantum Hall effect transition is studied in a modulation doped p-SiGe sample. In contrast to most examples of such transitions the longitudinal and Hall conductivities at the critical point are close to 0.5 and 1.5 (e^2/h), the…
We show that in a macroscopic perfect insulator, charge injection at a field-enhancing defect is associated with an instability of the insulating state or with bistability of the insulating and the charged state. The effect of a nonlinear…
Indium-doped SnTe has been of interest because the system can exhibit both topological surface states and bulk superconductivity. While the enhancement of the superconducting transition temperature is established, the character of the…
The mechanism of -U center formation in high-$T_{c}$ superconductors (HTS) with doping is considered. It is shown that the transition of HTS from insulator to metal passes through the particular dopant concentration range where the local…
The relationship between anomalous superdiffusive behavior and particle trapping probability is analyzed on a rocking ratchet potential with spatially correlated weak disorder. The trapping probability density is shown, analytically and…
Systems of particles in a confining potential exhibit a spatially dependent density which fundamentally alters the nature of phase transitions that occur. A specific instance of this situation, which is being extensively explored currently,…
We use a random gap model to describe a metal-insulator transition in three-dimensional semiconductors due to doping and find a conventional phase transition, where the effective scattering rate is the order parameter. Spontaneous symmetry…