Related papers: Donors in Ge as Qubits: Establishing Physical Attr…
In this report, we demonstrate that Ge-NWQD (nanowire quantum dots) at low temperatures exhibit apparent Coulomb oscillations than that in Si-NWQD. These oscillations gradually disappear as the temperature increases, indicating the…
Drawing independent samples from high-dimensional probability distributions represents the major computational bottleneck for modern algorithms, including powerful machine learning frameworks such as deep learning. The quest for discovering…
Self-assembled semiconductor quantum dot is a new type of artificially designed and grown function material which exhibits quantum size effect, quantum interference effect, surface effect, quantum tunneling-Coulumb-blockade effect and…
The abundance of Sodium (Na), its low-cost, and low reduction potential provide a lucrative inexpensive, safe, and environmentally benign alternative to Lithium Ion Batteries (LIBs). The significant challenges in advancing Sodium Ion…
I present a concise, first principles metrological framework for imaging dielectric biomaterials by probing the full phase space (Wigner) distribution of a quantum electromagnetic field. Building on a rigorous multilayer Maxwell and Cole…
Quantum wave function engineering of dopant-based Si nano-structures reveals new physics in the solid-state, and is expected to play a vital role in future nanoelectronics. Central to any fundamental understanding or application is the…
Covalent amorphous semiconductors, such as amorphous silicon (a-Si) and germanium (a-Ge), are commonly believed to have localized electronic states at the top of the valence band and the bottom of the conduction band. Electrical…
The properties of iron-based superconductors (Fe-SCs) can be varied dramatically with the introduction of dopants and atomic defects. As a pressing example, FeSe, parent phase of the highest-$T_c$ Fe-SC, exhibits prevalent defects with…
Models of light-matter interactions typically invoke the dipole approximation, within which atoms are treated as point-like objects when compared to the wavelength of the electromagnetic modes that they interact with. However, when the…
The outstanding properties of high-purity germanium (HPGe) detectors, such as excellent energy resolution, high energy sensitivity, and a low background-to-signal ratio, make them essential and ideal candidates for detecting particle…
Atomic-scale understanding of phosphorous donor wave functions underpins the design and optimisation of silicon based quantum devices. The accuracy of large-scale theoretical methods to compute donor wave functions is dependent on…
Buried-channel semiconductor heterostructures are an archetype material platform to fabricate gated semiconductor quantum devices. Sharp confinement potential is obtained by positioning the channel near the surface, however nearby surface…
The semiconducting behaviour and optoelectronic response of gallium nitride is governed by point defect processes, which, despite many years of research, remain poorly understood. The key difficulty in the description of the dominant…
Choosing optimal representation methods of atomic and electronic structures is essential when machine learning properties of materials. We address the problem of representing quantum states of electrons in a solid for the purpose of machine…
We report the fabrication and characterization of an electrostatic quantum dot in pure Germanium with an integrated charge measurement transistor. The device uses the Al2O3/Germanium interface for the confinement of carriers in the…
The attributes of group-V-donor spins implanted in an isotopically purified $^{28}$Si crystal make them attractive qubits for large-scale quantum computer devices. Important features include long nuclear and electron spin lifetimes of…
We investigate charge transfer in prototypical molecular donor-acceptor compounds using hybrid density functional theory (DFT) and the GW approximation at the perturbative level (G0W0) and at full self-consistency (sc-GW). For the systems…
Superconductors and semiconductors are crucial platforms in the field of quantum computing. They can be combined to hybrids, bringing together physical properties that enable the discovery of new emergent phenomena and provide novel…
A new doping mechanism is described, whereby a doping impurity does not simply transfer charge to the bands of a host semiconductor or semimetal, but rearranges the core energy levels deep in the valence band of the host. This, in turn,…
Development of the new nanomaterial - the mesoporous Ge - by bipolar electrochemical etching (BEE) and analysis of its physico-chemical properties is the subject of this thesis. Formation of mesoporous Ge by electrochemical etching was…