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Temperature-dependence and magnetic field-dependence of the Hall effect and the magnetic property in manganese-oxide thin films are studied. The spontaneous magnetization and the Hall resistivity are obtained for a various of magnetic…
Transport properties of the good thermoelectric misfit oxide Ca$_3$Co$_4$O$_9$ are examined. In-plane resistivity and Hall resistance measurements were made on epitaxial thin films which were grown on {\it c}-cut sapphire substrates using…
We report resistivity and Hall effect measurements in electron-doped Pr$_{2-x}$Ce$_{x}$CuO$_{4-\delta}$ films in magnetic field up to 58 T. In contrast to hole-doped cuprates, we find a surprising non-linear magnetic field dependence of…
We measure the anomalous Hall effect (AHE) resistivity $\rho_{xy}$ in thin films of the itinerant ferromagnet SrRuO$_{3}$. At low temperatures, the AHE coefficient $R_{s}$ varies with $\rho_{xx}^2$, and at higher temperatures, $R_{s}$…
The quantum anomalous Hall effect (QAHE) is a topological state of matter with a quantized Hall resistance. It has been observed in some two-dimensional insulating materials such as magnetic topological insulator films and twisted bilayer…
As one of the most fundamental physical phenomena, the anomalous Hall effect (AHE) typically occurs in ferromagnetic materials but is not expected in the conventional superconductors. Here, we have observed a giant AHE in kagome…
We investigated the transport properties under magnetic fields of up to 9 T for FeSe$_{1-x}$Te$_x$ thin films on CaF$_2$. Measurements of the temperature dependence of the electrical resistivity revealed that for $x = 0.2 - 0.4$, where…
A series of Fe$_x$Rh$_{100-x}$ ($30 \leq x \leq 57$) films were epitaxially grown using magnetron sputtering, and were systematically studied by magnetization-, electrical resistivity-, and Hall resistivity measurements. After optimizing…
The coexistence of superconductivity and ferromagnetism is a fascinating and complex phenomenon in condensed matter physics, as these two states are typically mutually exclusive due to their competing spin configurations. However, the…
The discovery of the quantum Hall (QH) effect led to the realization of a topological electronic state with dissipationless currents circulating in one direction along the edge of a two dimensional electron layer under a strong magnetic…
Recent observation of anomalous Hall effect (AHE) induced by magnetic field or spin magnetization lying in the Hall deflection plane has sparked interest in diverse mechanisms for inducing the Hall vector component perpendicular to the…
The anomalous Hall effect (AHE) in perpendicularly magnetized L10-Mn1.5Ga single-crystalline films is investigated as a function of degree of long-range chemical ordering and temperature. Our results provide firm evidence that phonons has…
Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and studied for development of the QHE resistance standard. The graphene-metal contacting area in the Hall devices has been improved and…
It is well known that the intrinsic anomalous Hall effect (AHE) arises from the integration of the non-zero Berry curvature (BC), conventionally observed in the Dirac/Weyl and nodal-line semimetals. Moreover, nodal surface semimetals are…
We report the occurrence of ferromagnetic-like anomalous Hall effect (AHE) below $30$ mT in bismuth single and policrystals. The signatures of ferromagnetism in transport are not corroborated in magnetization measurements, thus suggesting…
Anomalous Hall effect (AHE), one of the most important electronic transport phenomena, generally appears in ferromagnetic materials but is rare in materials without magnetic elements. Here, we present a study of La$_3$MgBi$_5$, whose band…
Quasi-two-dimensional transport is investigated in a system consisting of one ferromagnetic layer placed between two insulating layers. Using the mechanism of skew-scattering to describe the Extraordinary Hall Effect (EHE) and calculating…
Taking Mn doped Germanium as an example, we evoke the consideration of a two-band-like conduction in diluted ferromagnetic semiconductor (FMS). The main argument for claiming Ge:Mn as a FMS is the occurrence of the anomalous Hall effect…
We have observed the well-kown quantum Hall effect (QHE) in epitaxial graphene grown on silicon carbide (SiC) by using, for the first time, only commercial NdFeB permanent magnets at low temperature. The relatively large and homogeneous…
Anomalous Hall effect studies were performed at 300 K on Si/Fe multilayers prepared by dc magnetron sputtering. About 60 times enhancement in the saturation Hall resistance and 80 times enhancement in anomalous Hall coefficient are obtained…