Related papers: Spin Coated Multilayered Cupric Oxide Thin Films a…
Spin coating technique was employed to fabricate CuO films at different spin speeds for different time duration, and they were annealed at different temperatures for different time durations in air. These thin films were characterized using…
Thin films of Zn2+ doped cupric oxide (CuO) were synthesized using spin coating technique starting from a solution with Cu and Zn. The speed of spin coating and time duration were varied to fabricate a film with required uniform thickness.…
Zinc telluride (ZnTe) thin films have special semiconducting characteristics that make them very promising for a broad range of optoelectronic applications. In this work, a novel approach for synthesizing ZnTe thin films by spin coating…
Highly oriented ZnO thin-film has been obtained at a very low pre-heating temperature, with the spin-coating sol-gel technique. The dependence of the c-axis orientation on the pre-heating temperature has been studied with experimental…
A Li-Al-O thin film materials library, deposited by inert magnetron sputtering and post-deposition annealing in O2 atmosphere, was used to study the effects of different annealing temperatures (300 to 850{\deg}C) and durations (1 min to 7…
Ruthenium dioxide (RuO$_2$) thin films were synthesized by Chemical Solution Deposition (CSD) on silicon substrates using only water and acetic acid as solvents. The microstructure, phase-purity, electrical and optical properties as well as…
This investigation deals with the effect of annealing temperature on the structural, topographical and optical properties of Zinc Oxide thin films prepared by sol gel method. The structural properties were studied using X-ray diffraction…
Thin Ba0.5Sr0.5TiO3 (BST) films on p-type Si (100) using The Chemical Solution Deposition (CSD) method. X-ray diffraction (XRD), Scanning electron microscopy (SEM), C-V meter analysis measurement were employed to characterise the films. The…
In present study, Tetragonal Mn$_3$O$_4$ thin films of different coating layers of 2, 4, 6, 8, and 10 were prepared on the microscopic glass slides by the spin-coating method. X-ray diffraction, Raman spectroscopy, and ultra-violet visible…
CoFe2O4 thin films (5 nm and 20 nm thick) were grown by oxygen assisted molecular beam epitaxy on Pt(111) at 523~K and subsequently annealed at 773 K in vacuum or oxygen. They were characterized in-situ using Auger Electron Spectroscopy,…
Tin (IV) oxide (SnO2) sols have been synthesized from SnCl2.2H2O precursor solution by applying two different processing conditions. The prepared sols were then deposited on UV-Ozone treated quartz and soda lime glass (SLG) substrates by…
CdS samples were synthesized on amorphous glass and conductive glass substrates at room temperature using spin coating technique and subsequently annealed at five different temperatures in air for one hour. The speed and time of spin…
Cu added CdS films were synthesized using spin coating technique at different spin speeds for different time durations. Films were subsequently annealed at different temperatures for different time periods in air to crystallize the phase of…
CdS thin film samples were fabricated using spin coating technique on normal glass and conductive glass substrates and annealed at different temperatures. According to the XRD patterns of films prepared on normal glass substrates,…
Thin films of magnesium doped zinc oxide (MZO) were synthesized using the sol gel method and annealed at different temperatures under ambient condition. The morphological properties of the post annealed MZO films were investigated using X…
Spin coating technique was used to synthesize pure ZnO and Cu doped ZnO films on amorphous and conducting glass substrates. The doped amount of Cu in ZnO was varied up to 5% in atomic percentage. Speed of spin coating system, coating time,…
Copper oxide (CuO) thin films have been deposited on glass substrates by a facile sol-gel dip-coating technique with varying withdrawal speeds from 0.73 to 4.17 mm/s. The variation of film thickness manifested by dip-coating withdrawal…
Thin films of Ti1-xCoxO2 (x=0 and 0.03) have been prepared on sapphire substrates by spin-on technique starting from metalorganic precursors. When heat treated in air at 550 and 700 C respectively, these films present pure anatase and…
Al2O3 thin films have been deposited at substrate temperatures between 500{\deg}C to 600{\deg}C by reactive magnetron sputtering using an additional arbitrary substrate bias to tailor the energy distribution of the incident ions. The films…
The Si based TiO2 thin films were prepared via the combination both of Sol-Gel and Spin-Coating method. The films were sintered at 850 degrees Celsius for half an hour, and the resulting films were characterized by X-ray diffraction (XRD)…