Related papers: Intrinsic defects and conduction characteristics o…
The investigation of the defect chemistry of solid oxides is of central importance for the understanding of redox processes. This can be performed by measuring conductivity as a function of the oxygen partial pressure, which is…
CaCu3Ti4O12 (CCTO) ceramics are potential candidates for capacitor applications due to their large dielectric permittivity (e') values of up to 300 000. The underlying mechanism for the high e' is an internal barrier layer capacitor (IBLC)…
The electronic structure of the transparent semiconductor In2O3 has been studied by angle resolved photoemission spectroscopy upon deposition of metallic indium and also tin on the surface of the semiconductor. By deposition of metallic…
The in-plane optical properties of the inhomogeneous iron-chalcogenide superconductor K_{0.8}Fe_{2-y}Se_2 with a critical temperature Tc = 31 K have been modeled in the normal state using the Bruggeman effective medium approximation for…
ScN material is an emerging semiconductor with an indirect bandgap. It has attracted attention for its thermoelectric properties, use as seed layers, and for alloys for piezoelectric application. ScN or other transition metal nitride…
We report on a study of electric resistivity and magnetic susceptibility measurements in electron irradiated SrTi$_{0.987}$Nb$_{0.013}$O$_3$ single crystals. Point-like defects, induced by electron irradiation, lead to an almost threefold…
The thermal conductivity, $\kappa$, of the heavy fermion superconductor UPt$_3$ was measured down to T$_c$/10. The absence of a linear term in the temperature dependence as T$\rightarrow$0 strongly suggests there are no zero energy…
Electron scattering off an Anderson impurity immersed in the bulk of a 3D topological insulator is studied in the strong coupling regime, where the temperature $T$ is lower than the Kondo temperature $T_K$. The system displays either a…
Interfacial two-dimensional electron gas (2DEG), especially the SrTiO3-based ones at the unexpected interface of insulators, have emerged to be a promising candidate for efficient charge-spin current interconversion. In this article, to…
We investigate the effect due to background impurities embedded in the region of two-dimensional electron gases to the magnetotransport. These impurities are achieved by homogeneously incorporating Si atoms in single quantum wells of high…
We report the electronic properties of the NdNiO3, prepared at the ambient oxygen pressure condition. The metal-insulator transition temperature is observed at 192 K, but the low temperature state is found to be less insulating compared to…
The electrical characteristics and microstructures of $\beta$-Ga$_2$O$_3$ Schottky barrier diode (SBD) devices irradiated with swift heavy ions (2096 MeV Ta ions) have been studied. It was found that $\beta$-Ga$_2$O$_3$ SBD devices showed…
Schottky barrier inhomogeneities are expected at the metal/TMDC interface and this can impact device performance. However, it is difficult to account for the distribution of interface inhomogeneity as most techniques average over the…
CsPbI3 has been recognized as a promising candidate for optoelectronic device applications. To further improve the efficiency of the devices, it is imperative to better understand the surface properties of CsPbI3, which affect charge…
We investigate structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy on (001) SrTiO3 substrates. To distinguish the influence of the two types of disorders in the films, Ru…
We report persistent photoconductivity in $p$-type Sb$_2$Se$_3$ single crystals doped with Cd or Zn, where enhanced conductivity remains for hours after illumination ceases at temperatures below $\sim$25~K. Comparative transport and…
Thermoelectric materials create an electric potential when subject to a temperature gradient and vice versa hence they can be used to harvest waste heat into electricity and in thermal management applications. However, finding highly…
Local conduction at domains and domains walls is investigated in BiFeO3 thin films containing mostly 71o domain walls. Measurements at room temperature reveal conduction through 71o domain walls. Conduction through domains could also be…
A theory of non-equilibrium (``shot'') noise and high frequency conductance in diffusive mesoscopic conductors with screening is presented. Detailed results are obtained for two simple geometries, for both large and short electron-electron…
With infrared ellipsometry and transport measurements we investigated the electrons at the interface between LaAlO3 and SrTiO3. We obtained a sheet carrier density of Ns~5-9x 10E13 cm^-2, an effective mass of m*~3m_e, and a strongly…