Related papers: Characterizing Si:P quantum dot qubits with spin r…
We describe an electrodynamic mechanism for coherent, quantum mechanical coupling between spacially separated quantum dots on a microchip. The technique is based on capacitive interactions between the electron charge and a superconducting…
Semiconductor architectures hold promise for quantum information processing (QIP) applications due to their large industrial base and perceived scalability potential. Electron spins in silicon in particular may be an excellent architecture…
Electron spin resonance (ESR) spectroscopy in scanning tunneling microscopy (STM) has enabled probing the electronic structure of single magnetic atoms and molecules on surfaces with unprecedented energy resolution, as well as demonstrating…
An attempt is made to bypass spectral analysis and fit internal coordinates of radicals directly to experimental liquid- and solid-state electron spin resonance (ESR) spectra. We take advantage of the recently introduced large-scale spin…
The electron spin in a semiconductor quantum dot can be coherently controlled by an external electric field, an effect called electric-dipole spin resonance (EDSR). Several mechanisms can give rise to the EDSR effect, among which there is a…
Solid-state devices used for quantum computation and quantum sensing applications are adversely affected by loss and noise caused by spurious, charged two-level systems (TLS) and stray paramagnetic spins. These two sources of noise are…
In this paper we report on a tuneable few electron lateral triple quantum dot design. The quantum dot potentials are arranged in series. The device is aimed at studies of triple quantum dot properties where knowing the exact number of…
Once called a "classically non-describable two-valuedness" by Pauli , the electron spin is a natural resource for long-lived quantum information since it is mostly impervious to electric fluctuations and can be replicated in large arrays…
The impact of vacancies on spin-resolved electronic properties of quantum dots (QDs) in phosphorene-based junctions, are investigated numerically. Regardless of the crystal orientation, a phosphorene nanoribbon (PNR) containing a…
We present non-conventional electron spin resonance (ESR) experiments using microfabricated superconducting waveguides. We show that a very broad frequency range, from 0.5 to 40 GHz, becomes accessible with a high frequency accuracy of less…
We present an electron spin resonance (ESR) approach to characterize shallow electron trapping in band-tail states at Si/SiO2 interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at…
This review describes the physics of spins in quantum dots containing one or two electrons, from an experimentalist's viewpoint. Various methods for extracting spin properties from experiment are presented, restricted exclusively to…
Nuclear spins show exceptionally long coherence times but the underlying good isolation from their environment is a challenge when it comes to controlling nuclear spin qubits. A particular difficulty, not only for nuclear spin qubits, is…
Electron states in a inhomogeneous Ge/Si quantum dot array with groups of closely spaced quantum dots were studied by conventional continuous wave ($cw$) ESR and spin-echo methods. We find that the existence of quantum dot groups allows to…
Semiconductor spin qubits combine excellent quantum performance with the prospect of manufacturing quantum devices using industry-standard metal-oxide-semiconductor (MOS) processes. This applies also to ion-implanted donor spins, which…
Spin qubits in semiconductor quantum dots represent a prominent family of solid-state qubits in the effort to build a quantum computer. They are formed when electrons or holes are confined in a static potential well in a semiconductor,…
Spin qubits in semiconducting quantum dots are currently limited by slow readout processes, which are orders of magnitude slower than gate operations. In contrast, Andreev spin qubits benefit from fast measurement schemes enabled by the…
Donor impurity spins in silicon-28 are highly competitive qubits for upcoming solid-state quantum technologies, yet a proven scalable strategy for multi-qubit devices remains conspicuously absent. These CMOS-compatible, atomically identical…
We performed STM-ENDOR experiments where the intensity of one of the hyperfine components detected in ESR-STM is recorded while an rf power is irradiated into the tunneling junction and its frequency is swept. When the latter frequency is…
We report the development of the frequency-modulation (FM) method for measuring electron spin resonance (ESR) absorption in the 210-420 GHz frequency range. We demonstrate that using a high-frequency ESR spectrometer without resonating…