Related papers: Electroabsorption in MoS$_2$
We present an analytical investigation of the optical absorption spectrum of monolayer molybdenumdisulfide. Based on the density matrix formalism, our approach gives insights into the microscopic origin of excitonic transitions, their…
The ability to modulate light using 2-dimensional (2D) materials is fundamentally challenged by their small optical cross-section leading to miniscule modal confinements in diffraction-limited photonics despite intrinsically high…
We study the effect of a control beam on a Lambda electromagnetically induced transparency (EIT) system in 87Rb. The control beam couples one ground state to another excited state forming a four level N-system. Phase coherent beams to drive…
High order modulation formats constitute the most prominent way for increasing spectral efficiency in transmission systems. Coherent transceivers that support such higher order formats require heavy digital signal processing (DSP), which…
Monolayer transition metal dichalcogenides (TMDCs), like MoS$_2$, MoSe$_2$, WS$_2$, and WSe$_2$, feature direct bandgaps, strong spin-orbit coupling, and exciton-polariton interactions at the atomic scale, which could be harnessed for…
The anisotropy of the electronic transition is an important physical property not only determining the materials' optical property, but also revealing the underlying character of the electronic states involved. Here we used…
The improvement of light absorption in Si/BeSe$_{0.41}$Te$_{0.59}$ heterostructures for solar cell applications is studied theoretically. First, using simple approaches we found that light absorption could be improved in a single…
A holistic computational analysis is developed to calculate the quantum efficiency of InAs/GaSb superlattice-based photodetectors. Starting with the electronic band characteristics computed by taking the InSb/GaAs at the interface using the…
The electromagnetically induced transparency (EIT) phenomenon has been investigated in a $\Lambda$-system of the $^{87}$Rb D$_1$ line in an external transverse magnetic field. Two spectroscopic cells having strongly different values of the…
We implemented radio frequency-assisted electrostatic force microscopy (RF-EFM) to investigate the electric field response of biaxially strained molybdenum disulfide (MoS2) monolayers (MLs) in the form of mesoscopic bubbles, produced via…
Optical Mie resonators based on silicon nanostructures allow tuning of light-matter-interaction with advanced design concepts based on CMOS compatible nanofabrication. Optically active materials such as transition-metal dichalcogenide (TMD)…
We perform high-resolution photocurrent (PC) spectroscopy to investigate resonantly the neutral exciton ground-state (X0) in a single InAs/GaAs self-assembled quantum dot (QD) embedded in the intrinsic region of an n-i-Schottky photodiode…
Molybdenum disulfide (MoS2) has drawn great interest for tunable photonics and optoelectronics advancement. Its solution processing, though scalable, results in randomly networked ensembles of discrete nanosheets with compromised properties…
We study electrical transport properties in exfoliated molybdenum disulfide (MoS2) back-gated field effect transistors at low drain bias and under different illumination intensities. It is found that photoconductive and photogating effect…
We investigate the excitonic transitions in single- and few-layer MoSe2 phototransistors by photocurrent spectroscopy. The measured spectral profiles show a well-defined peak at the optically active (bright) A0 exciton resonance. More…
In semiconductor physics, many essential optoelectronic material parameters can be experimentally revealed via optical spectroscopy in sufficiently large magnetic fields. For monolayer transition-metal dichalcogenide semiconductors, this…
Recent experiments showed that unity-order index change in a transparent conducting oxide (TCO) can be achieved in a metal-oxide-semiconductor (MOS) structure by accumulation charge. However, the ultrathin (~5nm) accumulation layer and…
The effects of chemical disorder on the electronic and optical properties of semiconductor alloy multilayers are studied based on the tight-binding theory and single-site coherent potential approximation. Due to the quantum confinement of…
One of the basic optoelectronic characteristics is the absorption of any optoelectronic device or material. We present the characteristics of pure GaAs and the deviation of ideal spectra. Due to crystal defects, vacancies, impurities, etc.,…
Optical transitions in a semiconductor quantum dot are theoretically investigated, with emphasis on the coupling to longitudinal optical phonons, and including excitonic effects. When limiting to a finite number of $m$ electron and $n$ hole…