Related papers: Multilayer Silicene: a clear evidence
After the pioneering investigations into graphene-based electronics at Georgia Tech (GT), great strides have been made developing epitaxial graphene on silicon carbide (EG) as a new electronic material. EG has not only demonstrated its…
Synthetic ferrimagnetic (SFiM) multilayers offer a versatile platform for hosting skyrmions with tunable magnetic properties, combining the advantages of ferromagnets and antiferromagnets. Unlike synthetic antiferromagnets, SFiMs retain a…
We report the structural and physical properties of epitaxial Bi2FeCrO6 thin films on epitaxial SrRuO3 grown on (100)-oriented SrTiO3 substrates by pulsed laser ablation. The 300 nm thick films exhibit both ferroelectricity and magnetism at…
This paper presents the experimental results on research of growth processes of GaAs layers on silicon substrates by molecular beam epitaxy. The formation of buffer Si layer in a single growth process has been found to significantly improve…
Resonant x-ray scattering is performed near the Mn K-absorption edge for an epitaxial thin film of BiMnO3. The azimuthal angle dependence of the resonant (003) peak (in monoclinic indices) is measured with different photon polarizations;…
The search for high-quality transition metal dichalcogenides mono- and multi-layers grown on large areas is still a very active field of investigation nowadays. Here, we use molecular beam epitaxy to grow 15$\times$15 mm large WSe$_2$ on…
The ability to engineer localized surface plasmon resonances at large scale usually relies on precise nanoscale patterning. Here, we demonstrate that mid-infrared plasmonic responses can instead emerge in unpatterned polysilicon films…
Post deposition variation in film resistance of Sb2Te3 films deposited on glass substrates at room temperature and an elevated temperature (110oC) are investigated. The resistance of films grown at room temperature shows a non-linear…
We report on the observation of photogalvanic effects in epitaxially grown Sb_2Te_3 three-dimensional (3D) topological insulators (TI). We show that asymmetric scattering of Dirac electrons driven back and forth by the terahertz electric…
Doping of silicon via phosphene exposures alternating with molecular beam epitaxy overgrowth is a path to Si:P substrates for conventional microelectronics and quantum information technologies. The technique also provides a new and…
Soft x-ray fluorescence spectroscopy has been employed to obtain information about the Si-derived valence band states of Fe/Si multilayers. The valence band spectra are quite different for films with and without antiferromagnetic interlayer…
3D topological insulators are a new state of quantum matter which exhibits both a bulk band structure with an insulating energy gap as well as metallic spin-polarized Dirac fermion states when interfaced with a topologically trivial…
The electromagnetic interaction between Ag nanoparticles on the top of the Si substrate and the incident light has been studied by numerical simulations. It is found that the presence of a dielectric layer with different thickness leads to…
The signatures of topological superconductivity (TSC) in the superconducting materials with topological nontrivial states prompt intensive researches recently. Utilizing high-resolution angle-resolved photoemission spectroscopy and…
Polymorphism, which describes the occurrence of different lattice structures in a crystalline material, is a critical phenomenon in material science and condensed matter physics. It has emerged as a major focus for industry and regulatory…
Magnetic skyrmions are topologically non-trivial spin structure, and their existence in ferromagnetically coupled multilayers has been reported with disordered arrangement. In these multilayers, the heavy metal spacing layers provide an…
The structure of an Al(111)3x3-Si surface was examined by combining data from positron diffraction and core-level photoemission spectroscopy. Analysis of the diffraction rocking curves indicated that the overlayer had a flat honeycomb…
Oscillatory density profiles (layers) have previously been observed at the free surfaces of liquid metals, but not in other isotropic liquids. We have used x-ray reflectivity to study a molecular liquid, tetrakis(2-ethylhexoxy)silane. When…
The temperature-induced shift of the Raman G line in epitaxial graphene on SiC and Ni surfaces, as well as in graphene supported on SiO2, is investigated with Raman spectroscopy. The thermal shift rate of epitaxial graphene on 6H-SiC(0001)…
The morphology of graphene on SiC {0001} surfaces formed in various environments including ultra-high vacuum, 1 atm of argon, and 10^-6 to 10^-4 Torr of disilane is studied by atomic force microscopy, low-energy electron microscopy, and…