Related papers: Optical Characterization of PtSi/Si by Spectroscop…

Low cost, easily integrable photodetectors (PDs) for silicon (Si) photonics are still a bottleneck for photonic integrated circuits (PICs), especially for wavelengths above 1.8 ${\mu}$m. Multilayered platinum diselenide (PtSe$_2$) is a…

Using two different experimental techniques, namely, chemical vapor deposition (CVD) and physical vapor deposition (PVD), we deposited a Lead sulphide (PbS) thin films with a very small lifetime. We investigated the morphology of the…

Magnetic resonance imaging (MRI) based electrical properties tomography (EPT) is the quantification of the conductivity and permittivity of different tissues. These electrical properties can be obtained through different reconstruction…

We have studied ferroelectricity and photovoltaic effects in atomic layer deposited (ALD) 40-nm thick SnTiO$_{x}$ films deposited directly onto p-type (001)Si substrate. These films showed well-saturated, square and repeatable hysteresis…

Nickel silicide Schottky diodes formed on polycrystalline Si<P> films are proposed as temperature sensors of monolithic uncooled microbolometer IR focal plane arrays. Structure and composition of nickel silicide/polycrystalline silicon…

Platinum diselenide (PtSe2) is a newly discovered 2D material which is of great interest for applications in electronics and catalysis. PtSe2 films were synthesized by thermally-assisted selenization of predeposited platinum films and…

Spectroscopic ellipsometry (SE) has emerged as a powerful and non-destructive optical characterization technique for probing the complex dielectric properties of two-dimensional (2D) materials. This review provides a comprehensive overview…

Metal silicides formed by means of thermal annealing processes are employed as contact materials in microelectronics. Control of the structure of silicide/silicon interfaces becomes a critical issue when the device characteristic size is…

PEPSI is the bench-mounted, two-arm, fibre-fed and stabilized Potsdam Echelle Polarimetric and Spectroscopic Instrument for the 2x8.4 m Large Binocular Telescope (LBT). Three spectral resolutions of either 43 000, 120 000 or 270 000 can…

The reflectance difference (RD) as a function of film thickness was measured during Pb deposition on Si(111)-(6x6)Au surface at 105 K. The oblique incident s- and p-polarized light with energy range 0.25-0.60 eV was used. The component of…

Mo, Pt, Pt/Mo and Pt/Ti thin films have been deposited onto Si and SiO2 substrates by RF sputtering and annealed in the YBa2Cu3O7-d growth conditions. The effect of annealing on the sheet resitance of unpatterned layers was measured. A…

The present theoretical study focuses on the structural, electronic and thermoelectric properties of PbTe, PbSe and their ternary alloys PbSe$_{x}$Te$_{1-x}$, using the density functional theory (DFT) by the full potential linearised…

By employing large-scale molecular dynamics simulations of atomistically resolved oligoelectrolytes in aqueous solutions, we study in detail the first four layer-by-layer deposition cycles of an oligoelectrolyte multilayer made of…

Two-dimensional (2D) metal halides have received more attention because of their electronic and optoelectronic properties. Recently, researchers are interested to investigate the thermoelectric properties of metal halide monolayers because…

Monolayer PbSe has been predicted to be a two-dimensional (2D) topological crystalline insulator (TCI) with crystalline symmetry-protected Dirac-cone-like edge states. Recently, few-layered epitaxial PbSe has been grown on the SrTiO3…

The dielectric properties of noncrystalline hafnium silicon oxynitride (HfSiON) films with a variety of atomic compositions were investigated. The films were deposited by reactive sputtering of Hf and Si in an O, N, and Ar mixture ambient.…

PbTaSe2 is a non-centrosymmetric topological semimetal. In this work we have explored the structural, elastic, mechanical, bonding, electronic, acoustic, thermal, and optical properties of PbTaSe2. The electronic bond structure calculations…

PbZrxTi1-xO3 (PZT) is one of the technologically most important ferroelectric materials. Bulk single-domain single crystals of PZT have never been synthesized for a significant compositional range across the solid-solution phase diagram.…

In this work we use first-principles density-functional theory (DFT) calculations combined with the maximally localized Wannier function tight binding Hamiltonian (MLWF-TB) and Bethe-Salpeter equation (BSE) formalism to investigate…

The deposition of Al film onto the (111) surface of a p-Si crystal was shown to induce a deformation in the near-surface layer of the latter. Provided that the crystal strain is elastic and uniaxial, the gettering of defects in the…