Related papers: Single-edge transport in an InAs/GaSb quantum spin…
Tunneling conductance $G(T)$ through a constricted point contact is studied for the $\nu=2/3$ spin-singlet edges. Including spin-flip tunneling, Zeeman splitting and random magnetic impurities, we discuss the various crossovers of $G(T)$ as…
Mainstream among topological insulators, GaSb/InAs quantum wells present a broken gap alignment for the energy bands which supports the quantum spin Hall insulator phase and forms an important building block in the search of exotic states…
In a topological insulator (TI) the character of electron transport varies from insulating in the interior of the material to metallic near its surface. Unlike, however, ordinary metals, conducting surface states in TIs are topologically…
Quantum spin Hall (QSH) insulators are two-dimensional electronic materials that have a bulk band gap like an ordinary insulator but have topologically protected pairs of edge modes of opposite chiralities. To date, experimental studies…
We study transport properties of the helical edge channels of a quantum spin Hall (QSH) insulator, in the presence of electron-electron interactions and weak, local Rashba spin-orbit coupling. The combination of the two allows for inelastic…
Our experimental studies of electron transport in wide (14 nm) HgTe quantum wells confirm persistence of a two-dimensional topological insulator state reported previously for narrower wells, where it was justified theoretically. Comparison…
Using the random matrix theory, we investigate the ensemble statistics of edge transport of a quantum spin Hall insulator with multiple edge states in the presence of quenched disorder. Dorokhov-Mello-Pereyra-Kumar equation applicable for…
Motivated by surprises in recent experimental findings, we study transport in a model of a quantum Hall edge system with a gate-voltage controlled constriction. A finite backscattered current at finite edge-bias is explained from a…
The band-inverted electron-hole bilayers, such as InAs/GaSb, are an interesting playground for the interplay of quantum spin Hall effect and correlation effects because of the small density of electrons and holes and the relatively small…
Three-dimensional topological insulators of finite thickness can show the quantum Hall effect (QHE) at the filling factor $\nu=0$ under an external magnetic field if there is a finite potential difference between the top and bottom…
The physics of a junction composed of a normal metal, quantum dot and 2D topological insulator (in a quantum spin Hall state) is elucidated. It maifests a subtle combination of Kondo correlations and quantum spin Hall edge states moving on…
The experiments in quantum spin Hall insulator candidate materials, such as HgTe/CdTe and InAs/GaSb heterostructures, indicate that in addition to the topologically protected helical edge modes these multilayer heterostructures may also…
We consider thermoelectric transport properties of the edge states of a two dimensional topological insulator in a double quantum point contact geometry coupled to two thermally biased reservoirs. Both spin-preserving and spin-flipping…
We evidence the possibility for coherent electrical manipulation of the spin orientation of topologically protected edge states in a low-symmetry quantum spin Hall insulator. By using a combination of ab-initio simulations, symmetry-based…
We investigate two-dimensional hole transport in GaSb quantum wells at cryogenic temperatures using gate-tunable devices. Measurements probing the valence band structure of GaSb unveil a significant spin splitting of the ground subband…
Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band-gaps of about 10--18~meV. The former however features a band-gap vanishing with temperature, while the gap in…
The two-dimensional electron gas residing in shallow InAs quantum wells coupled to epitaxial aluminum is a widely utilized platform for exploration of topological superconductivity. Strong spin-orbit coupling, large effective $g$-factor,…
We report an experimental study of one-dimensional (1D) electronic transport in an InSb semiconducting nanowire. Three bottom gates are used to locally deplete the nanowire creating a ballistic quantum point contact with only a few…
We consider a four-terminal setup of a two-dimensional topological insulator (quantum spin Hall insulator) with local tunneling between the upper and lower edges. The edge modes are modeled as helical Luttinger liquids and the…
We report on transport experiments through high-mobility gate-tunable undoped InSb QWs. Due to the elimination of any Si modulation doping, the gate-defined two-dimensional electron gases in the quantum wells display a significantly…