Related papers: Vector magnetometry using silicon vacancies in 4H-…
Silicon vacancy in silicon carbide has drawn much attention for various quantum sensing. However, most of the previous experiments are achieved using confocal scanning systems, which limit its applications in practical applications. In this…
The possibility of using axial spin color centers with $S=3/2$, oriented along the hexagonal $c$ axis in a silicon carbide (SiC) wafer, has been demonstrated for all-optical measurement of projection of the external magnetic field…
We show that uniaxial color centers in silicon carbide with hexagonal lattice structure can be used to measure not only the strength but also the polar angle of the external magnetic field with respect to the defect axis with high…
We show that implementations for quantum sensing with exceptional sensitivity and spatial resolution can be made using spin-3/2 semiconductor defect states. We illustrate this using the silicon monovacancy deep center in hexagonal SiC based…
Optically-active point defects in various host materials, such as diamond and silicon carbide (SiC), have shown significant promise as local sensors of magnetic fields, electric fields, strain and temperature. Current sensing techniques…
Pressure-induced magnetic phase transition is attracting interest due to its ability to detect superconducting behaviour at high pressures in diamond anvil cells. However, detection of the local sample magnetic properties is a great…
Electronic spin systems with S>1/2 provide an efficient method for DC vector magnetometry, since the conventional electron spin resonance spectra at a given magnetic field reflect not only the field strength but also orientation in the…
The controlled generation and manipulation of atom-like defects in solids has a wide range of applications in quantum technology. Although various defect centres have displayed promise as either quantum sensors, single photon emitters or…
The negatively charged silicon vacancy [V$_\text{Si}(-)$] in silicon carbide (SiC) is a paramagnetic and optically active defect in hexagonal SiC. V$_\text{Si}(-)$ defect possesses $S = 3/2$ spin with long spin coherence time and can be…
Identification of microscopic configuration of point defects acting as quantum bits is a key step in the advance of quantum information processing and sensing. Among the numerous candidates, silicon vacancy related centers in silicon…
The silicon monovacancy in 4H-SiC is a promising candidate for solid-state quantum information processing. We perform high-resolution optical spectroscopy on single V2 defects at cryogenic temperatures. We find favorable low temperature…
Silicon vacancies in silicon carbide (SiC) have been proposed as interesting candidates for quantum technology applications such as quantum sensing and quantum repeaters. SiC exists in many polytypes with different plane stacking sequences,…
Defects in silicon carbide are of intense and increasing interest for quantum-based applications due to this material's properties and technological maturity. We calculate the multi-particle symmetry adapted wave functions of the negatively…
We discuss the fine structure and spin dynamics of spin-3/2 centers associated with silicon vacancies in silicon carbide. The centers have optically addressable spin states which makes them highly promising for quantum technologies. The…
Silicon vacancies in silicon carbide have been proposed as an alternative to nitrogen vacancy centers in diamonds for spintronics and quantum technologies. An important precondition for these applications is the initialization of the qubits…
Shallow negatively charged silicon-vacancy centers have applications in magnetic quantum sensing and other quantum applications. Vacancy centers near the surface (within 100 nm) have different spin relaxation rates and optical spin…
We uncover the fine structure of a silicon vacancy in isotopically purified silicon carbide (4H-$^{28}$SiC) and find extra terms in the spin Hamiltonian, originated from the trigonal pyramidal symmetry of this spin-3/2 color center. These…
The unique quantum properties of the nitrogen-vacancy (NV) center in diamond have motivated efforts to find defects with similar properties in silicon carbide (SiC), which can extend the functionality of such systems not available to the…
We demonstrate an all-optical magnetometer capable of measuring the magnitude and direction of a magnetic field using nonlinear magneto-optical rotation in a cesium vapor. Vector capability is added by effective modulation of the field…
Vector magnetometry is an essential tool in characterizing the distribution of currents and magnetization in a broad range of systems. Point defect sensors, like the nitrogen vacancy (NV) center in diamond, have demonstrated impressive…