Related papers: The granularity effect in amorphous InGaZnO$_4$ fi…

A series of electron-doped cuprate La(2-x)CexCuO4 thin films with different thicknesses have been fabricated and their annealing time are adjusted carefully to ensure the highest superconducting transition temperature. The transport…

The transverse magnetoresistance of thin films of the Diluted Magnetic Semiconductor Zn$_{1-x}$Co$_{x}$O:Al on glass was studied for temperatures in the range of 5 to 100 K. Measurements were made on thin films grown by rf magnetron…

We study the low temperature conductivity of the electron accumulation layer induced by the very strong electric field at the surface of $\text{SrTiO}_3$ sample. Due to the strongly nonlinear lattice dielectric response, the…

Transparent conductive indium tin oxide (ITO) thin films, electrochemically intercalated with sodium or other cations, show tunable superconducting transitions with a maximum $T_c$ at 5 K. The transition temperature and the density of…

Variable temperature scanning tunneling microscopy/spectroscopy studies on (110) oriented epitaxial thin films of La$_{0.350}$Pr$_{0.275}$Ca$_{0.375}$MnO$_3$ are reported in the temperature range of 77 to 340 K. The films, grown on lattice…

We present electrical conductance measurements on amorphous NbSi insulating thin films. These films display out-of equilibrium electronic features that are markedly different from what has been reported so far in disordered insulators. Like…

We report on a systematic study of strain effects on the transport properties and the ferromagnetic transition temperature $T_{c}$ of high-quality La$_{0.9}$Sr$_{0.1}$MnO$_{3}$ thin films epitaxially grown on (100) SrTiO$_{3}$ substrates.…

The evolution with carrier concentration of the electrical properties of amorphous indium oxide (InO) thin films has been studied using electronic double layer transistor configurations. Carrier variations of up to 7 X 10^(14) carriers/cm^2…

Crystalline wurtzite zinc oxide (w-ZnO) can be used as a wide band gap semiconductor for light emitting devices and for transparent or high temperature electronics. The use of amorphous zinc oxide (a-ZnO) can be an advantage in these…

Using a combination of time-domain THz spectroscopy (TDTS) and mutual inductance measurements, we have investigated the low-energy electrodynamic response of overdoped La$_{2-x}$Sr$_x$CuO$_4$ films that have been exposed to ion irradiation.…

The anomalous Hall effect (AHE) of ferromagnetic thin films of Sr$_{1-x}$Ca$_{x}$RuO$_3$ (0 $\leq x \leq$ 0.4) is studied as a function of $x$ and temperature $T$. As $x$ increases, both the transition temperature $T_c$ and the…

CrSb is an attractive material for room-temperature antiferromagnetic spintronic applications because of its high N\'{e}el temperature $\sim$700 K and semi-metallic character. We study the magnetic properties of CrSb bilayers on few-layer…

High quality vanadium sesquioxide V2O3 films (170-1100 {\AA}) were grown using the pulsed laser deposition technique on (0001)-oriented sapphire substrates, and the effects of film thickness on the lattice strain and electronic properties…

Systematic transport measurements have been performed on a series of La0.67Ca0.33MnO3 (LCMO) thin films with varying degrees of anisotropic strain. The strain is induced via epitaxial growth on NdGaO3(001) substrates and varied by…

The resistivity of thin $La_{0.7}A_{0.3}MnO_{3}$ films ($A=Ca, Sr$) is investigated in a wide temperature range. The comparison of the resistivities is made among films grown by different techniques and on several substrates allowing to…

The electrical conductivity induced near the superconducting transition by thermal fluctuations was measured in different granular aluminum films. The seemingly anomalous behavior at high reduced temperatures and magnetic fields is…

With a swift progress in modern high-throughput communication systems, security, sensing and medicine utilizing THz range technologies, the demand for easy-to-fabricate, lightweight and high-performance absorbing materials has increased…

We have investigated the electrical conduction processes in as-grown and thermally cycled ZnO single crystal as well as as-grown ZnO polycrystalline films over the wide temperature range 20--500 K. In the case of ZnO single crystal between…

While we demonstrate a back-gated (BG) amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) transistors with a nearly ideal subthreshold slope (SS) ~ 60 mV/dec. However, SS degrades when a top-gated (TG) configuration is implemented. The energy…

We investigated thermal conductivity of free-standing reduced graphene oxide films subjected to a high-temperature treatment of up to 1000 C. It was found that the high-temperature annealing dramatically increased the in-plane thermal…