Related papers: Metal-Mott insulator interfaces
We present a framework to characterize Mott insulating phases within the interacting one-body picture, focusing on the Hubbard diamond chain featuring both Hubbard interactions and spin-orbit coupling simulated within cellular dynamical…
The insulator-to-metal transition (IMT) in strongly correlated materials, such as vanadium dioxide (VO2), offers a transformative platform for next-generation adaptive electronics and neuromorphic computing. However, harnessing this…
We utilize a glass-like structural transition in order to induce a Mott metal-insulator transition in the quasi-two-dimensional organic charge-transfer salt $\kappa$-(BEDT-TTF)$_2$Cu[N(CN)$_2$]Br. In this material, the terminal ethylene…
In condensed-matter physics, electronic Mott insulators have triggered considerable research due to their intricate relation with high-temperature superconductors. However, unlike atomic systems for which Mott phases were recently shown for…
The non-thermal breakdown of a Mott insulator has been a topic of great theoretical and experimental interest with technological relevance. Recent experiments have found a sharp non-equilibrium insulator-to-metal transition that is…
Motivated by the commonplace observation of Mott insulators away from integer filling, we construct a simple thermodynamic argument for phase separation in first-order doping-driven Mott transitions. We show how to compute the critical…
By comparing the responses to an in-plane magnetic field near the metal-insulator transition (MIT), we find that the observed MIT in Si MOSFETs can be described by the non-perturbative Mott-Hubbard scenario. Interrelations between…
The one dimensional Bose-Hubbard model at a unit filling factor is studied by means of a very high order symbolic perturbative expansion. Analytical expressions are derived for the ground state quantities such as energy per site, variance…
We develop a real space theory of the voltage bias driven transition from a Mott insulator to a correlated metal. Within our Keldysh mean field approach the problem reduces to a self-consistency scheme for the charge and spin profiles in…
We address how the nature of linearly dispersing edge states of two dimensional (2D) topological insulators evolves with increasing electron-electron correlation engendered by a Hubbard like on-site repulsion $U$ in finite ribbons of two…
We have investigated the Mott transition in a quasi-two-dimensional Mott insulator EtMe$_3$P[Pd(dmit)$_2$]$_2$ with a spin-frustrated triangular lattice in hydrostatic pressure and magnetic field. In the pressure-temperature ($P$-$T$) phase…
We analyze the unanalytical structure of metal-insulator transition (MIT) in infinite dimensions. By introducing a simple transformation into the dynamical mean-field equation of Hubbard model, a multiple-valued structure in Green's…
The ground state phase diagrams of the Falicov--Kimball model with local disorder is derived within the dynamical mean--field theory and using the geometrically averaged (''typical'') local density of states. Correlated metal, Mott…
We study numerically the voltage-induced breakdown of a Mott insulating phase in a system of charged classical particles with long-range interactions. At half-filling on a square lattice this system exhibits Mott localization in the form of…
$VO_2$ undergoes the insulator-metal transition (IMT) and monoclinic-rutile structural phase transition (SPT) near $67^oC$. The IMT switching has many applications. However, there is an unresolved issue whether the IMT is a Mott transition…
We find that isoelectronic disorder destroys the spectral gap in a Mott-Hubbard insulator in 2D leading, most unexpectedly, to a new metallic phase. This phase is spatially inhomogeneous with metallic behavior coexisting with…
We study small systems of Mott insulating ultracold atoms under the influence of gauge potentials and spin-orbit couplings. We use second order perturbation theory in tunneling, derive an effective theory for the Mott insulators with one…
The metal-insulator transition in correlated electron systems, where electron states transform from itinerant to localized, has been one of the central themes of condensed matter physics for more than half a century. The persistence of this…
A major challenge in condensed matter physics is integrating topological phenomena with correlated electron physics to leverage both types of states for next-generation quantum devices. Metal-insulator transitions (MITs) are central to…
We expose the relevance of double occupancy conservation symmetry in application of the Hubbard-I approach to strongly correlated electron systems. We propose the utility of a composite method, viz. the Hubbard-I method in conjunction with…