Related papers: Nuclear spin warm-up in bulk n-GaAs
Nuclear spin relaxation is studied in n-GaAs thick layers and microcavity samples with different electron densities. We reveal that both in metallic samples where electrons are free and mobile, and in insulating samples, where electrons are…
Spin-lattice relaxation of the nuclear spin system in p-type GaAs is studied using a three-stage experimental protocol including optical pumping and measuring the difference of the nuclear spin polarization before and after a dark interval…
Understanding and manipulating spin polarization and transport in the vicinity of semiconductor-hosted defects is a problem of present technological and fundamental importance. Here, we use high-field magnetic resonance to monitor the…
We discuss the implications of a small indium content (3%) in a GaAs epilayer on the electron- and nuclear-spin relaxation due to enhanced quadrupolar effects induced by the strain. Using the weakly perturbative spin-noise spectroscopy, we…
We have studied theoretically the electron spin relaxation in semiconductor quantum dots via interaction with nuclear spins. The relaxation is shown to be determined by three processes: (i) -- the precession of the electron spin in the…
Thermal motion of the flux lines (FL) gives rise to fluctuating magnetic fields. These dynamic fields couple to the nuclei in the sample and relax the nuclear spins. Based on a model of harmonic fluctuations, we provide a theoretical…
We derived a simple reduced form from the exact solution of the mixed magnetic and quadrupolar nuclear spin--lattice relaxation function at the central transition line of a quadrupole-split NMR spectrum for the nuclear spin $I$ = 3/2. The…
Light excitation of a semiconductor, known to dynamically-polarize the nuclear spins by hyperfine contact interaction with the photoelectrons, also generates an intrinsic nuclear depolarization mechanism. This novel relaxation process…
Strain-induced gradients of local electric fields in semiconductor quantum dots can couple to the quadrupole moments of nuclear spins. We develop a theory describing the influence of this quadrupolar coupling (QC) on the spin correlators of…
The hyperfine field from dynamically polarized nuclei in n-GaAs is very spatially inhomogeneous, as the nu- clear polarization process is most efficient near the randomly-distributed donors. Electrons with polarized spins traversing the…
We present numerical results for electron spin relaxation rates for single and laterally coupled double GaAs quantum dots in a perpendicular magnetic field. As source of spin relaxation we consider hyperfine interaction with the nuclear…
Coherent two-level systems, or qubits, based on electron spins in GaAs quantum dots are strongly coupled to the nuclear spins of the host lattice via the hyperfine interaction. Realizing nuclear spin control would likely improve electron…
Heat capacity of the nuclear spin system (NSS) in GaAs-based microstructures has been shown to be much greater than expected from dipolar coupling between nuclei, thus limiting the efficiency of NSS cooling by adiabatic demagnetization. It…
This study investigated the formation and relaxation dynamics of nuclear spin polarization in three Al$_x$Ga$_{1-x}$As bulk samples with different aluminum concentrations $x$ of 0.00, 0.05, and 0.15. The time-resolved Kerr rotation…
The spin dynamics of localized donor-bound electrons interacting with the nuclear spin ensemble in $n$-doped GaAs epilayers is studied using nuclear spin polarization by light with modulated circular polarization. We show that the observed…
Understanding the decoherence of electron spins in semiconductors due to their interaction with nuclear spins is of fundamental interest as they realize the central spin model and of practical importance for using electron spins as qubits.…
Low-temperature electron spin relaxation is studied by the optical orientation method in bulk n-GaAs with donor concentrations from 10^14 cm^{-3} to 5x10^17 cm^{-3}. A peculiarity related to the metal-to-insulator transition (MIT) is…
Photoluminescence polarization is experimentally studied for samples with (In,Ga)As/GaAs selfassembled quantum dots in transverse magnetic field (Hanle effect) under slow modulation of the excitation light polarization from fractions of Hz…
The spin diffusion concept provides a classical description of a purely quantum-mechanical evolution in inhomogeneously polarized many-body systems such as nuclear spin lattices. The central spin of a localized electron alters nuclear spin…
The spin relaxation time $T_{1}$ in zinc blende GaN quantum dot is investigated for different magnetic field, well width and quantum dot diameter. The spin relaxation caused by the two most important spin relaxation mechanisms in zinc…