Related papers: Inside the perpendicular spin-torque memristor
Memristor is the fourth fundamental passive circuit element with potential applications in development of analog memories, artificial brains (with the capacity of hardware training) and neuro-science. In most of these applications the…
Once referred to as the missing circuit component, memristor has come long way across to be recognized and taken as important to future circuit designs. The memristor due to its ability to memorize the state, switch between different…
Pure spin currents transport angular momentum without an associated charge flow. This unique property makes them attractive for spintronics applications, such as torque induced magnetization control in nanodevices that can be used for…
Memristors have been suggested as neuromorphic computing elements. Spike-time dependent plasticity and the Hodgkin-Huxley model of the neuron have both been modelled effectively by memristor theory. The d.c. response of the memristor is a…
Here we demonstrate that both, tunnel magneto resistance (TMR) and resistive switching (RS), can be observed simultaneously in nano-scale magnetic tunnel junctions. The devices show bipolar RS of 6 % and TMR ratios of about 100 %. For each…
The human brain achieves exceptional energy efficiency by co-locating memory and processing, yet reproducing this principle in hardware remains challenging because many neuromorphic devices require standby power, offer limited…
Memristors can mimic the functions of biological synapse, where it can simultaneously store the synaptic weight and modulate the transmitted signal. Here, we report Nb/Nb2O5/Pt based memristors with bipolar resistive switching, exhibiting…
Memristors are an electronic device whose resistance depends on the voltage history that has been applied to its two terminals. Despite its clear advantage as a computational element, a suitable transport model is lacking for the special…
Spin-transfer torque magnetoresistive random access memory (STT-MRAM) is an attractive alternative to current random access memory technologies due to its non-volatility, fast operation and high endurance. STT-MRAM does though have…
Altermagnets, a newly discovered class of magnets, integrate the advantages of both ferromagnets and antiferromagnets, such as enabling anomalous transport without stray fields and supporting ultrafast spin dynamics, offering exciting…
We report on the controllable pinning of domain walls in stripes with perpendicular magnetic anisotropy by magnetostatic coupling to magnetic vortices in disks located above the stripe. Pinning mechanisms and depinning fields are reported.…
We report a memory resistance (memristor) behavior with nonlinear current-voltage characteristics and bipolar hysteretic resistance switching in the nanocolumnar manganite (LSMO) films. The switching from a high (HRS) to a low (LRS)…
The memristive device is one of the basic elements of novel, brain-inspired, fast, and energy-efficient information processing systems in which there is no separation between memorization and information analysis functions. Since the first…
Nanoscale magnetic tunnel junction plays a pivotal role in magnetoresistive random access memories. Successful implementation depends on a simultaneous achievement of low switching current for the magnetization switching by spin-transfer…
The realization of chiral spin textures - comprising myriad distinct, nanoscale arrangements of spins with topological properties - has established pathways for engineering robust, energy-efficient and scalable elements for non-volatile…
Understanding the magnetization dynamics induced by spin transfer torques in perpendicularly magnetized magnetic tunnel junction nanopillars and its dependence on material parameters is critical to optimizing device performance. Here we…
In pursuit of neuromorphic (brain-inspired) devices, memristors (memory-resistors) have emerged as effective components for emulating neuronal circuitry. Here we formally define a class of Simple Volatile Memristors (SVMs) based on a simple…
The storage industry is moving toward emerging non-volatile memories (NVMs), including the spin-transfer torque magnetoresistive random-access memory (STT-MRAM) and the phase-change memory (PCM), owing to their high density and low-power…
Memristors, resistors with memory whose outputs depend on the history of their inputs, have been used with success in neuromorphic architectures, particularly as synapses and non-volatile memories. However, to the best of our knowledge, no…
Memristors have been suggested as a novel route to neuromorphic computing based on the similarity between neurons (synapses and ion pumps) and memristors. The D.C. action of the memristor is a current spike, which we think will be fruitful…