Related papers: Electrical control over perpendicular magnetizatio…
Using a pure electric current to control kagome noncollinear antiferromagnets is promising in information storage and processing, but a full description is still lacking, in particular, on intrinsic (i.e., no external magnetic fields or…
Controlling spin current lies at the heart of spintronics and its applications. The sign of spin currents is monotonous in ferromagnets once the current direction is determined. Spin currents in antiferromagnets can possess opposite…
The discovery of efficient magnetization switching activated by the spin Hall effect (SHE)-induced spin-orbit torque (SOT) changed the course of magnetic random-access memory (MRAM) research and development. However, for systems with…
Deterministic control of domain walls orthogonal to the direction of current flow is demonstrated by exploiting spin orbit torque in a perpendicularly polarized Ta/CoFeB/MgO multilayer in presence of an in-plane magnetic field. Notably,…
Spin torques, that is, effects of conduction electrons on magnetization dynamics, are calculated microscopically in the first order in spatial gradient and time derivative of magnetization. Special attention is paid to the so-called…
We present a comprehensive study of the current-induced spin-orbit torques in perpendicularly magnetized Ta/CoFeB/MgO layers. The samples were annealed in steps up to 300 degrees C and characterized using x-ray absorption spectroscopy,…
The electric field effect on magnetism was examined in the multiferroic conical magnet Mn$_2$GeO$_4$, which shows a strong coupling between ferromagnetic and ferroelectric order parameters. The systematic evaluation of the electric…
We study ballistic transport through semiconductor quantum point contact systems under different confinement geometries and applied fields. In particular, we investigate how the {\em lateral} spin-orbit coupling, introduced by asymmetric…
In the quest to develop spintronic logic, it was discovered that magnetoelectric switching results in lower energy and shorter switching time than other mechanisms. Magnetoelectric (ME) field due to exchange bias at the interface with a…
Magnetic torques generated through spin-orbit coupling promise energy-efficient spintronic devices. It is important for applications to control these torques so that they switch films with perpendicular magnetizations without an external…
Controlling magnetism using voltage is highly desired for applications, but remains challenging due to fundamental contradiction between polarity and magnetism. Here we propose a mechanism to manipulate magnetic domain walls in…
Current-induced spin-orbit torques (SOTs) represent one of the most effective ways to manipulate the magnetization in spintronic devices. The orthogonal torque-magnetization geometry, the strong damping, and the large domain wall velocities…
Manipulation of the spin-states of a quantum dot by purely electrical means is a highly desirable property of fundamental importance for the development of spintronic devices such as spin-filters, spin-transistors and single-spin memory as…
Spintronics is an approach to electronics in which the spin of the electrons is exploited to control the electric resistance R of devices. One basic building block is the spin-valve, which is formed if two ferromagnetic electrodes are…
Conventional spintronic mechanisms, such as spin-transfer and spin-orbit torques based on the spin current, rely on breaking time-reversal symmetry to manipulate magnetic moments. In contrast, for spatially separated dual spin currents, the…
The current induced magnetization reversal in nanoscale spin valves is a potential alternative to magnetic field switching in magnetic memory devices. We show that the critical switching current can be decreased by an order of magnitude by…
Perpendicular exchange bias (EB), which combines the perpendicular magnetic anisotropy and the ferromagnetic (FM) - antiferromagnetic (AFM) exchange coupling, is extremely important in the high-density AFM spintronics. However, the…
Magnetization switching in ferromagnetic structures is an important process for technical applications such as data storage in spintronics, and therefore the determination of the corresponding switching rates becomes essential. We…
We consider the generation of a pure spin-current at zero bias voltage with a single time-dependent potential. To such end we study a device made of a mesoscopic ring connected to electrodes and clarify the interplay between a magnetic…
The switching process of the vortex core in a Permalloy nanodisk affected by a rotating magnetic field is studied theoretically. A detailed description of magnetization dynamics is obtained by micromagnetic simulations.