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We reported the basal-plane thermal conductivity in exfoliated bilayer hexagonal boron nitride h-BN that was measured using suspended prepatterned microstructures. The h-BN sample suitable for thermal measurements was fabricated by…
We present a Raman study of ZrAs_{2} single crystals, a nodal line semimetal with symmetry-enforced Dirac-like band crossings. We identified the symmetry of phonon modes by polarized light measurements and comparison with calculated phonon…
Defects in solid-state systems constitute a promising platform for the realization of deterministic quantum emitters. Among many candidate materials and emitters, point defects in hexagonal Boron Nitride (hBN) have recently emerged as…
A robust process for fabricating intrinsic single-photon emitters in silicon nitride has been recently established. These emitters show promise for quantum applications due to room-temperature operation and monolithic integration with the…
The $V_N N_B$ defect in hexagonal boron nitride (h-BN), comprising a nitrogen vacancy adjacent to a nitrogen-for-boron substitution, is modelled in regard to its possible usefulness in a nanophotonics device. The modelling is done on both a…
Solid-state quantum emitters constitute an essential building blocks of integrated quantum photonic circuits. Among potential emitter platforms, hexagonal boron nitride (hBN) hosts single-photon emitters in an atomically thin lattice…
The time-dependent Mandel Q parameter, Q(T), provides a measure of photon number variance for a light source as a function of integration time. Here, we use Q(T) to characterise single photon emission from a quantum emitter in hexagonal…
Recent observation of quantum emitters in monolayers of hexagonal boron nitride (h-BN) has provided a novel platform for optomechanical experiments where the single-photon emitters can couple to the motion of freely suspended h-BN membrane.…
We combine electron energy-loss spectroscopy and first-principles calculations based on density-functional theory (DFT) to identify the lowest indirect exciton state in the in-plane charge response of hexagonal boron nitride (h-BN) single…
Optically active defects in hexagonal boron nitride (hBN) have become amongst the most attractive single-photon emitters in the solid state, owing to their high-quality photophysical properties, combined with the unlimited possibilities of…
Atomically thin van der Waals crystals have recently enabled new scientific and technological breakthroughs across a variety of disciplines in materials science, nanophotonics and physics. However, non-classical photon emission from these…
Optically active spin defects in van der Waals (vdW) materials are a promising platform for quantum sensing, potentially enabling shorter standoff distances than defects in diamond and thus improved measurement signal-to-noise ratio (SNR)…
We demonstrate the use of Stimulated Emission Depletion (STED) spectroscopy to map the electron-optical-phonon sideband of the ground state of the radiative transition of color centers in hexagonal boron nitride emitting at 2.0-2.2 eV, with…
Atom-like defects in two-dimensional (2D) hexagonal boron nitride (hBN) have recently emerged as a promising platform for quantum information science. Here we investigate single-photon emissions from atomic defects in boron nitride…
Color centers in hexagonal boron nitride (hBN) are presently attracting broad interest as a novel platform for nanoscale sensing and quantum information processing. Unfortunately, their atomic structures remain largely elusive and only a…
Recent advancements in thermal conductivity modulating strategies have shown promising enhancements to the thermal management capabilities of two-dimensional materials. In this article, both iterative Boltzmann transport equation solution…
Single-molecule photoluminescence (PL) spectroscopy of semiconductor nanocrystals (NCs) reveals the nature of exciton-phonon interactions in NCs. Understanding the narrow line shapes at low temperatures and the significant broadening as…
Exciton-phonon interactions play a central role in defining the optical response of hexagonal boron nitride (hBN), yet their quantitative determination has remained incomplete. Here, we reveal the Fr\"ohlich-type exciton-phonon coupling in…
We investigate thermal properties of a NbN single-photon detector capable of unit internal detection efficiency. Using an independent calibration of the coupling losses we determine the absolute optical power absorbed by the NbN film and,…
Lead sulfide is an important semiconductor that has found technological applications for over a century. Raman spectroscopy, a standard tool for the investigation and characterization of semiconductors, has limited application to this…