Related papers: A non-volatile memory based on nonlinear magnetoel…
We have measured magnetic and transport response on the polycrystalline La$_{5/8-y}$Pr$_y$Ca$_{3/8}$MnO$_3$ ($y=0.30$, average grain size 2 microns) compound. In the temperature range where ferromagnetic metallic and insulating regions…
A heat-assisted multiferroic solid-state memory design is proposed and analysed, based on a PbNbZrSnTiO3 antiferroelectric substrate and Ni81Fe19 magnetic free layer. Information is stored as magnetisation direction in the free layer of a…
We report on the fabrication and electrical characterization of few-layer graphene (FLG) devices coated with a ferroelectric polymer layer of poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)]. Highly stable and reliable resistance…
Logical devices based on spin waves offer the potential to avoid dissipation mechanisms that limit devices based on either the charge or spin of mobile electrons. Multiferroic magnetoelectrics, which are materials that combine ferroelectric…
Atomically thin layered two-dimensional materials, including transition-metal dichacolgenide (TMDC) and black phosphorus (BP), (1) have been receiving much attention, because of their promising physical properties and potential applications…
We present a multifunctional and multistate permanent memory device based on lateral electric field control of a strained surface. Sub-coercive electrical writing of a remnant strain of a PZT substrate imprints stable and rewritable…
Using the ultra low damping NiMnSb half-Heusler alloy patterned into vortex-state magnetic nano-dots, we demonstrate a new concept of non-volatile memory controlled by the frequency. A perpendicular bias magnetic field is used to split the…
Spin-memristors are a class of materials that can store memories through the control of spins, potentially leading to novel technologies that address the constraints of standard silicon electronics, thereby facilitating the advancement of…
Although several multiferroic materials/heterostructures have been extensively studied, finding strong magnetoelectric couplings for the electric field control of the magnetization remains challenging. Here, a novel interfacial…
Mutiferroics are a novel class of next generation multifunctional materials, which display simultaneous magnetic spin, electric dipole, and ferroelastic ordering, and have drawn increasing interest due to their multi-functionality for a…
Using programmable analog quantum annealing processors, we implement a sampling-based magnetic hysteresis protocol to probe the counterintuitive notion of magnetic memory of antiferromagnets. A key component of this protocol responsible for…
Non-volatile multivalued memory effects caused by magnetic fields, currents, and voltage pulses are studied in Nd_{0.65}Ca_{0.35}MnO_3 and (Nd_{1-y}Sm_{y})_{0.5}Sr_{0.5}MnO_3 (y=0.75) single crystals in the hysteretic region between…
Recently, interest in programmable photonics integrated circuits has grown as a potential hardware framework for deep neural networks, quantum computing, and field programmable arrays (FPGAs). However, these circuits are constrained by the…
We demonstrate non-volatile optical functionality by embedding multi-layer $HfO_2/Al_2O_3$ memristors with III-V/Si photonics. The wafer-bonded III-V/Si memristor facilitates non-volatile optical functionality for a variety of devices such…
We investigate polarization memory effects in single-crystal CuFeO2, which has a magnetically-induced ferroelectric phase at low temperatures and applied B fields between 7.5 and 13 T. Following electrical poling of the ferroelectric phase,…
It has been shown that the combining of the electrical effect on the exchange bias field with giant magneto-resistance effect of the graphene/ferromagnet hybrid structures reveals a new non-volatile magnetic random access memory device…
Magneto-Electric FET (MEFET) is a recently developed post-CMOS FET, which offers intriguing characteristics for high speed and low-power design in both logic and memory applications. In this paper, for the first time, we propose a…
Magnetoelectric multiferroics are key materials for next-generation spintronic devices due to their entangled magnetic and ferroelectric properties. Spiral multiferroics possess ferroelectric polarization and are particularly promising for…
The traditional magnetic storage mechanisms (both analog and digital) apply an external field signal H(t) to a hysteretic magnetic material, and read the remanent magnetization M(t), which is (roughly) proportional to H(t). We propose a new…
Antiferromagnets (AFMs) are presently considered as promising materials for applications in spintronics and random access memories due to the robustness of information stored in AFM state against perturbing magnetic fields (P. Wadley et…