Related papers: Random networks of carbon nanotubes optimized for …

In percolating networks of mixed metallic and semiconducting CNTs, there is a tradeoff between high on-current (dense networks) and high on/off ratio (sparse networks in which the metallic CNT fraction is not percolating). Experiments on…

High-performance solution-processed short-channel carbon nanotube (CNT) thin film transistors (TFTs) are fabricated using densely aligned arrays of metallic CNTs (m-CNTs) as source and drain electrodes, and aligned arrays of semiconducting…

Amorphous carbon nanotubes (a-CNT) with up to four walls and sizes ranging from 200 to 3200 atoms have been simulated, starting from initial random configurations and using the Gaussian Approximation Potential [Phys. Rev. B 95, 094203…

Large-scale fully interconnected ring carbon nanotube (CNT) networks were first prepared using thermo chemical vapor deposition in nano-channel network templates of porous anodic alumina. This conductive CNT network film consists of…

Efforts aimed at large-scale integration of nanoelectronic devices that exploit the superior electronic and mechanical properties of single-walled carbon nanotubes (SWCNTs) remain limited by the difficulties associated with manipulation and…

Controlled growth, patterning and placement of carbon nanotube (CNT) thin films for electronic applications are demonstrated. The density of CNT films is controlled by optimizing the feed gas composition as well as the concentration of…

The electrostatic coupling between singled-walled carbon nanotube (SWNT) networks/arrays and planar gate electrodes in thin-film transistors (TFTs) is analyzed both in the quantum limit with an analytical model and in the classical limit…

A vertical partial gate carbon nanotube (CNT) field-effect transistor (FET), which is amenable to the vertical CNT growth process and offers the potential for a parallel CNT array channel, is simulated using a self-consistent atomistic…

We perform systematic numerical simulations for carbon nanotube (CNT) film microstrip antennas to fabricate flexible and durable applications in terms of various device design parameters. The selection of appropriate materials for…

A simple method combining photolithography and shadow (or angle) evaporation is developed to fabricate single-walled carbon nanotube (SWCNT) devices with tube lengths L~10-50 nm between metal contacts. Large numbers of such short devices…

A fresh look on carbon-based transistor channel materials like single-walled carbon nanotubes (CNT) and graphene nanoribbons (GNR) in future electronic applications is given. Although theoretical predictions initially promised that GNR…

Chiral carbon nanotubes (CNTs) are direct-gap semiconductors with optical properties governed by one-dimensional excitons with enormous oscillator strengths. Each species of chiral CNTs has an enantiomeric pair of left- and right-handed…

Single-walled carbon nanotubes are promising nanoelectronic materials but face long-standing challenges including production of pure semiconducting SWNTs and integration into ordered structures. Here, highly pure semiconducting…

We determined the frequency dependent effective permittivity of a large ternary network of randomly positioned resistors, capacitors, and diodes. A linear circuit analysis of such systems is shown to match the experimental dielectric…

The ultimate performance - ratio of electrical conductivity to optical absorbance - of single- walled carbon nanotube (SWCNTs) transparent conductive films (TCFs) is an issue of considerable application relevance. Here, we present direct…

Single-walled carbon nanotubes (SWNTs) are typically long (>100 nm) and have been well established as novel quasi one-dimensional systems with interesting electrical, mechanical, and optical properties. Here, quasi zero-dimensional SWNTs…

The inability to synthesize single-wall carbon nanotubes (SWCNTs) possessing uniform electronic properties and chirality represents the major impediment to their widespread applications. Recently, there is growing interest to explore and…

Substantial progress on field effect transistors "FETs" consisting of semiconducting single wall carbon nanotubes "s-SWNTs" without detectable traces of metallic nanotubes and impurities is reported. Nearly perfect removal of metallic…

Carbon nanotube field-effect transistors (CNFETs) are promising candidates for building energy-efficient digital systems at highly-scaled technology nodes. However, carbon nanotubes (CNTs) are inherently subject to variations that reduce…

Single-walled carbon nanotubes (SWNTs) are potential materials for future nanoelectronics. Since the electronic and optical properties of SWNTs strongly depend on tube diameter and chirality, obtaining SWNTs with narrow (n,m) chirality…