Related papers: Instability Mechanism for STT-MRAM switching
Spin-transfer torque magnetoresistive random access memory (STT-MRAM) is an attractive alternative to current random access memory technologies due to its non-volatility, fast operation and high endurance. STT-MRAM does though have…
We report on an experimental study of current induced switching in perpendicular magnetic random access memory (MRAM) cells with variable resistance-area products (RAs). Our results show that in addition to spin transfer torque (STT),…
Using type-x spin-orbit torque (SOT) switching scheme, in which the easy axis (EA) of the ferromagnetic (FM) layer and the charge current flow direction are collinear, is possible to realize a lower-power-consumption, higher-density, and…
Spin transfer torques (STTs) control magnetisation by electric currents, enabling a range of nano-scale spintronic applications. They can destabilise the equilibrium magnetisation state by counteracting magnetic relaxation. Here, we…
Scanning tunneling microscopy (STM) can be used to detect inelastic spin transitions in magnetic nano-structures comprising only a handful of atoms. Here we demonstrate that STM can uniquely identify the electrostatic spin crossover effect,…
The mechanisms of thermally activated magnetization switching in small ferromagnetic particles driven by an external magnetic field are investigated. For low uniaxial anisotropy the spins rotate coherently while for sufficiently large…
Progress in artificial intelligence and machine learning over the past decade has been driven by the ability to train larger deep neural networks (DNNs), leading to a compute demand that far exceeds the growth in hardware performance…
We numerically study the thermal stability properties of computer memory storage realized by a magnetic ellipse. In the case of practical magnetic random-access memory devices, the bit can form a spin texture during switching events. To…
A model for single-domain uniaxial ferromagnetic particles with high anisotropy, the Ising model, is studied. Recent experimental observations have been made of the probability that the magnetization has not switched. Here an approach is…
It is shown that magnetic states and field-driven reorientation transitions in synthetic antiferromagnets crucially depend on contributions of higher-order anisotropies. A phenomenological macrospin model is derived to describe the magnetic…
The critical current density $J_{c0}$ required for switching the magnetization of the free layer (FL) in a spin-transfer torque magnetic random access memory (STT-MRAM) cell is proportional to the product of the damping parameter,…
As an emerging non-volatile memory (NVM) technology, spin-torque transfer magnetic random access memory (STT-MRAM) has received great attention in recent years since it combines the features of low switching energy, fast write/read speed,…
Spin transfer - the transfer of angular momentum from spin-polarized electrical current to magnetic materials - has been extensively researched as an efficient mechanism for the electronic manipulation of the static and dynamic states in…
In magnetic memory and logic devices, a magnet's magnetization is usually flipped with a spin polarized current delivering a spin transfer torque (STT). This mode of switching consumes too much energy and considerable energy saving can…
We study analytically the precessional switching of the magnetization of a thin macrospin. We analyze its response when subjected to an external field along its in-plane hard axis. We derive the exact trajectories of the magnetization. The…
Spin torque majority gates are modeled and several regimes of magnetization switching (some leading to failure) are discovered. The switching speed and noise margins are determined for STMGs and an adder based on it. With switching time of…
We show that spin-polarized dc current passing through a small magnetic element induces two-state, random telegraph switching of the magnetization via the spin-momentum transfer effect. The resistances of the states differ by up to 50% of…
Magnetization switching in ferromagnetic structures is an important process for technical applications such as data storage in spintronics, and therefore the determination of the corresponding switching rates becomes essential. We…
Impact of spin transfer torque (STT) on the write error rate of a voltage-torque-based magnetoresistive random access memory is theoretically analyzed by using the macrospin model. During the voltage pulse the STT assists or suppresses the…
The storage industry is moving toward emerging non-volatile memories (NVMs), including the spin-transfer torque magnetoresistive random-access memory (STT-MRAM) and the phase-change memory (PCM), owing to their high density and low-power…