Related papers: An invisible non-volatile solid-state memory
Density functional calculations are performed to investigate the experimentally-reported field-induced phase transition in thin-film ZrO2 (J. Muller et al., Nano. Lett. 12, 4318). We find a small energy difference of ~ 1 meV/f.u. between…
Antiferroelectrics exhibit reversible antipolar-polar phase transitions under electric fields, yielding large electrostrain suitable for electromechanical devices. Nevertheless, in thin-film form, the antiferroelectric behavior is often…
Although ferromagnets are found in all kinds of technological applications, only few substances are known to be intrinsically ferromagnetic at room temperature. In the past twenty years, a plethora of new artificial ferromagnetic materials…
Using the real-space Hartree Fock approximation, the magnetic phase diagram of a five-orbital Hubbard model for the iron-based superconductors is studied varying the electronic density $n$ in the range from 5 to 7 electrons per transition…
We show that in suitable anisotropic ferromagnets, both stable and metastable ``tilted'' phases occur, in which the magnetization ${\vec M}$ makes an angle between zero and $180$ degrees with the externally applied ${\vec H}$. Tuning either…
Magnetoelastic and magnetoelectric coupling in the artificial multiferroic heterostructures facilitate valuable features for device applications such as magnetic field sensors and electric write magnetic-read memory devices. In a…
Low-energy antiferromagnetic phase transitions offer an appealing platform for low-power spintronic functionalities, yet their direct electrical access in insulating antiferromagnets remains challenging, particularly in the low-field regime…
Electrical manipulation of antiferromagnetic states, a cornerstone of antiferromagnetic spintronics, is a great challenge, requiring novel material platforms. Here we report the full control over antiferromagnetic states by voltage pulses…
We have systematically measured resistivity, susceptibility and specific heat under different magnetic fields (H) in Eu$_{1-x}$La$_x$Fe$_2$As$_2$ single crystals. It is found that a metamagnetic transition from A-type antiferromagnetism to…
Multiferroics, where two or more ferroic order parameters coexist, is one of the hottest fields in condensed matter physics and materials science[1-9]. However, the coexistence of magnetism and conventional ferroelectricity is physically…
First-generation magnetic random access memories based on anisotropic magnetoresistance required magnetic fields for both writing and reading. Modern all-electrical read/write memories use instead non-relativistic spin-transport connecting…
We show a novel magneto-resistive effect that appears in lithographically shaped, three-arm nanostructure, fabricated from ferromagnetic (Ga,Mn)As layers. The effect, related to a rearrangement of magnetic domain walls between different…
The newly discovered altermagnets are unconventional collinear compensated magnetic systems, exhibiting even (d, g, or i-wave) spin-polarization order in the band structure, setting them apart from conventional collinear ferromagnets and…
Low temperature studies of the behavior of the sound velocity and attenuation of acoustic modes have been performed on a single crystal NdFe_3(BO_3)_4. Transitions of the magnetic subsystem to the antiferromagnetically ordered state at T_N…
Antiferromagnets (AFMs) with zero net magnetization are proposed as active elements in future spintronic devices. Depending on the critical thickness of the AFM thin films and the measurement temperature, bimetallic Mn-based alloys and…
We present resistivity, specific heat and magnetization measurements in high quality single crystals of HoBi, with a residual resistivity ratio of 126. We find, from the temperature and field dependence of the magnetization, an…
The antiferroaxial state is emerging as an important ferroic order in condensed matter systems. Here, we establish antiferroaxial altermagnetism as a broadly prevalent, generic, and microscopically grounded multiferroic mechanism, in which…
We propose a non-volatile memory element based on a lateral ferromagnetic Josephson junction with spin-orbit coupling and out-of-plane magnetization. The interplay between the latter and the intrinsic exchange field of the ferromagnet leads…
Two-dimensional (2D) van der Waals (vdW) multiferroics offer an attractive platform for four-state nonvolatile memory by combining switchable ferroelectric polarization and magnetization within a single material system. However, their…
Solid-state programmable metallization cells have attracted considerable attention as memristive elements for Redox-based Resistive Random Access Memory (ReRAM) for low-power and low-voltage applications. In principle, liquid-state…