Related papers: An invisible non-volatile solid-state memory
We investigate polarization memory effects in single-crystal CuFeO2, which has a magnetically-induced ferroelectric phase at low temperatures and applied B fields between 7.5 and 13 T. Following electrical poling of the ferroelectric phase,…
Cache serves as a temporary data memory module in many general-purpose processors and domain-specific accelerators. Its density, power, speed, and reliability play a critical role in enhancing the overall system performance and quality of…
Electric field-induced magnetization switching in multiferroics is intriguing for both fundamental studies and potential technological applications. Here, we review the recent developments on electric field-induced magnetization switching…
In recent years, antiferromagnetic spintronics has received much attention since ideal antiferromagnets do not produce stray fields and are much more stable to external magnetic fields compared to materials with net magnetization. Akin to…
Due to its proximity to room temperature and demonstrated high degree of temperature tunability, the metamagnetic ordering transition in FeRh is attractive for novel high-performance computing devices seeking to use magnetism as the state…
Magnetic vortices are topological spin structures frequently found in ferromagnets, yet novel to antiferromagnets. By combining experiment and theory, we demonstrate that in a nanostructured antiferromagnetic-ferromagnetic NiO(111)-Fe(110)…
It has been recently demonstrated that the magnetic state of FeRh can be controlled by electric fields in FeRh/BaTiO$_{\text{3}}$ heterostructures [R.O. Cherifi et al. Nature Mater. 13, 345 (2014)]. Voltage-controlled changes in the…
The functionality of logic and memory elements in current electronics is based on multi-stability, driven either by manipulating local concentrations of electrons in transistors, or by switching between equivalent states of a material with…
Control of physical property in terms of external fields is essential for contemporary technologies. The conductance can be controlled by a gate electric field in a field effect transistor, which is a main component of the integrated…
Femtosecond laser control of antiferromagnetic order is a cornerstone for future memory and logic devices operating at terahertz clock rates. The advent of altermagnets -- antiferromagnets with unconventional spin-group symmetries --…
Mutual control of the electricity and magnetism in terms of magnetic (H) and electric (E) fields, the magnetoelectric (ME) effect, offers versatile low power-consumption alternatives to current data storage, logic gate, and spintronic…
The theory behind the electrical switching of antiferromagnets is premised on the existence of a well defined broken symmetry state that can be rotated to encode information. A spin glass is in many ways the antithesis of this state,…
Electrical tuning of magnetism is crucial for developing fast, compact, ultra-low power electronic devices. Multiferroics offer significant potential due to their ability to control magnetic via an electric field through magnetoelectric…
We present a multifunctional and multistate permanent memory device based on lateral electric field control of a strained surface. Sub-coercive electrical writing of a remnant strain of a PZT substrate imprints stable and rewritable…
My research is dedicated to the electronic properties of functional oxides. My activity specifically focuses on ferroelectric tunnel junctions in which an ultrathin layer of ferroelectric material is intercalated between two metallic…
We have fabricated a variety of "PZT-PFW" (PbZr0.52Ti0.48O3)1-x(PbFe2/3W1/3O3)x [PZTFWx; 0.2 < x < 0.4] single-phase tetragonal ferroelectrics via chemical solution deposition (CSD) [polycrystalline] and pulsed laser deposition (PLD)…
The coexistence of different ferroelectric phases enables the tunability of the macroscopic properties and extensive applications from piezoelectric transducers to nonvolatile memories. Here we develop a thermodynamic model to predict the…
Planar electrodes patterned on a ferroelectric substrate are shown to provide lateral control of the conductive state of a two-terminal graphene stripe. A multi-level and on-demand memory control of the graphene resistance state is…
The explosive growth of artificial intelligence and data-intensive computing has brought crucial challenge to modern information science and technology, i.e. conceptually new devices with superior properties are urgently desired. Memristor…
The notion of a simple ordered state implies homogeneity. If the order is established by a broken symmetry, elementary Landau theory of phase transitions shows that only one symmetry mode describes this state. Precisely at points of phase…