Related papers: Reversibly switchable electromagnetic device with …
Advanced flexible electronics and soft robotics require the development and implementation of flexible functional materials. Magnetoelectric (ME) oxide materials can convert magnetic input into electric output and vice versa, making them…
The ability to actively regulate heat flow at the nanoscale could be a game changer for applications in thermal management and energy harvesting. Such a breakthrough could also enable the control of heat flow using thermal circuits, in a…
We present an integrated switch that combines plasmonic and neuromorphic technologies with a single sub-stoichiometric VO2-x nanoparticle. The presented device acts as a versatile plasmonic switch with dual thermal and electrical…
A heterojunction-like device consisting of FTO/CeO2/electrolyte/FTO is established with distinct transport performance, where FTO denotes F-doped transparent conducting glass, and the electrolyte is LiI and I2 in acetonitrile. The resistive…
The ability to switch magnetic elements by spin-orbit-induced torques has recently attracted much attention for a path towards high-performance, non-volatile memories with low power consumption. Realizing efficient spin-orbit-based…
The magnetization orientation of a nanoscale ferromagnet can be manipulated using an electric current via the spin transfer effect. Time domain measurements of nanopillar devices at low temperatures have directly shown that magnetization…
The exchange bias effect is an essential component of magnetic memory and spintronic devices. Whereas recent research has shown that anisotropies perpendicular to the device plane provide superior stability against thermal noise, it has…
We have studied the electrical field induced conductance transition in thin film of Perylenetetracarboxylic dianhydride sandwiched between two metal electrodes, from an insulating state to conducting state with a high ON-OFF ratio in those…
The out-of-equilibrium excess conductance of electron-glasses typically relaxes with a logarithmic time-dependence. Here it is shown that the log(t) relaxation of a weakly-disordered amorphous indium-oxide films crosses-over asymptotically…
Controlling the magnetization reversal process of magnetic elements is important for a wide range of applications that make use of magnetoresistive effects, but is difficult to achieve for devices that require adjacent thin film structures…
Voltage-controlled resistive switching is demonstrated in various gap systems on SiO2 substrate. The nanosized gaps are made by different means using different materials including metal, semiconductor, and metallic nonmetal. The switching…
Electronically phase separated manganite wires are found to exhibit controllable metal-insulator transitions under local electric fields. The switching characteristics are shown to be fully reversible, polarity independent, and highly…
This letter reports on the observation of optoelectronic switching in addressable molecular crossbar junctions fabricated using polymer stamp-printing method. The active medium in the junction is a molecular self-assembled monolayer softly…
The proposed switching mechanism is based on an electronically-induced metal-insulator transition occurring in conditions of the excess non-equilibrium carrier density under the applied electric field. First, this mechanism is developed on…
With a large-scale usage of portable electric appliances, a high demand for increasingly high density energy storage devices has emerged. MoO3 has, in principle, a large potential as negative electrode material in supercapacitive devices,…
We present an optimal field-free protocol for current-induced switching of a perpendicularly magnetized ferromagnetic insulator nanoelement on the surface of a topological insulator. The time dependence of in-plane components of the surface…
Current approaches for electric power generation from nanoscale conducting or semi-conducting layers in contact with moving aqueous droplets are promising as they show efficiencies of around 30 percent, yet, even the most successful ones…
Resistive switching is one of the key phenomena for applications such as nonvolatile memories or neuromorphic computing. V3O5, a compound of the vanadium oxide Magn\'eli series, is one of the rare materials to exhibit an insulator-metal…
Resistive switching memories allow electrical control of the conductivity of a material, by inducing a high resistance (OFF) or a low resistance (ON) state, using electrochemical and ion transport processes. As alternative to high…
In metal/oxide heterostructures, rich chemical, electronic, magnetic and mechanical properties can emerge from interfacial chemistry and structure. The possibility to dynamically control interface characteristics with an electric field…