Related papers: Disentangling nonradiative recombination processes…
The contribution to the low frequency internal friction and the thermal conductivity due to optically vibrating edge dislocation dipoles is calculated within the modified Granato-Lucke string model. The results are compared with the recent…
Recent reports of strong room-temperature photoluminescence in hexagonal diamond (2H) germanium stand in marked contrast to theoretical predictions of very weak band-edge optical transitions. Here we address radiative emission in 2H-Ge and…
The band structure of MoS$_2$ strongly depends on the number of layers, and a transition from indirect to direct-gap semiconductor has been observed recently for a single layer of MoS$_2$. Single-layer MoS$_2$ therefore becomes an efficient…
The prospect of GeSn semiconductors for silicon-integrated infrared optoelectronics brings new challenges related to the metastability of this class of materials. As a matter of fact, maintaining a reduced thermal budget throughout all…
While transient photoluminescence measurements are a very popular tool to monitor the charge-carrier dynamics in the field of halide perovskite photovoltaics, interpretation of data obtained on multilayer samples is highly challenging due…
We present a theoretical study of Ge-core/Si-shell nanocrystals in a wide bandgap matrix and compare the results with experimental data obtained from the samples prepared by co-sputtering. The empirical tight-binding technique allows us to…
Photo-stimulated desorption (PSD) of Xe atoms from the Au(001) surface in thermal and nonthermal regimes was investigated by the time-of-flight measurement at photon energies of 6.4 and 2.3 eV. Xe was desorbed in a thermal way at high laser…
Time-resolved photoluminescence (PL) and micro-PL imaging were used to study single CdS nanowires at 10 K. The low-temperature PL of all CdS nanowires exhibit spectral features near energies associated with free and bound exciton…
Germanium thin films are an excellent candidate for use as a low-loss dielectric in superconducting microwave resonators, a low-loss inter-layer metal wiring dielectric, and passivation layers in microwave and Josephson junction devices. In…
Formation of p+ contact on Germanium is important for applications in diode detector and other electronic devices. In this work, thermally deposited Al on Ge crystal is annealed at 350oC followed by slow cooling for solid-state regrowth of…
We demonstrate the generation of degenerate photon pairs from spontaneous parametric down-conversion in titanium in-diffused waveguides in lithium niobate at cryogenic temperatures. Since the phase-matching cannot be temperature tuned…
Metal halide perovskites feature excellent absorption, emission and charge carrier transport properties. These materials are therefore very well suited for photovoltaics applications where there is a growing interest. Still, questions arise…
We investigate the transport of dipolar indirect excitons along the growth plane of polar (Al,Ga)N/GaN quantum well structures by means of spatially- and time-resolved photoluminescence spectroscopy. The transport in these strongly…
III-V semiconductor nanolight sources with deep-subwavelength dimensions ($<<$1 ${\mu}$m) are essential for miniaturized photonic devices such as nanoLEDs and nanolasers. However, these nanoscale emitters suffer from substantial…
Dopant-free lateral p-n junctions in the GaAs/AlGaAs material system have attracted interest due to their potential use in quantum optoelectronics (e.g., optical quantum computers or quantum repeaters) and ease of integration with other…
Spall failure, a complex failure mechanism driven by tensile stress wave interactions, has been extensively studied in single-crystal FCC metals, revealing a precursor stage involving dislocation emission along closed-packed directions.…
The ultrawide-bandgap semiconductor $\beta$-Ga2O3 holds exceptional promise for next-generation power electronics and deep-ultraviolet optoelectronics, yet its widespread application is hindered by the lack of cost-effective, high-quality…
We report on photoluminescence in the 3-7 $\mu$m mid-wave infrared (MWIR) range from sub-100 nm strained thin films of rocksalt PbSe(001) grown on GaAs(001) substrates by molecular beam epitaxy. These bare films, grown epitaxially at…
By implementing four-wave mixing (FWM) micro-spectroscopy we measure coherence and population dynamics of the exciton transitions in monolayers of MoSe$_2$. We reveal their dephasing times T$_2$ and radiative lifetime T$_1$ in a…
Time-stamped data have been used to estimate the decay half-lives of radioactive 118mSb and 64,66,68Ga nuclei. These nuclei are populated through the reaction 4He (Elab = 32 MeV) + nat In and p (Elab = 10 MeV) + natZn, respectively. The g…