Related papers: Architecting three-dimensional ZnO nanorods
Integration of complex photonic structures onto optical fiber facets enables powerful platforms with unprecedented optical functionalities. Conventional nanofabrication technologies, however, do not permit viable integration of complex…
Cr-doped ZnO films were fabricated by a new but feasible method, that is, annealing Cr-Zn layers deposited via DC magnetron sputtering in air. Microstructures of the films were investigated using X-ray diffraction, scanning electron…
We have successfully obtained a ZnO/ZnS heterostructure by heating a ZnS(001) single crystal in a controlled impurities-free oxygen atmosphere. Combining X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM), we explore…
Simple high-performance two-stage hybrid technique was developed for fabrication of different plasmonic nanostructures, including nanorods, nanorings, as well as more complex structures on glass substrates. In this technique a thin noble…
Despite many efforts the origin of a ferromagnetic (FM) response in ZnMnO and ZnCoO is still not clear. Magnetic investigations of our samples, not discussed here, show that the room temperature FM response is observed only in alloys with a…
The development of uniform GaN micro-pyramids and platelets via selective area growth is a critical step toward advancing III-nitride device technologies, particularly for micro-light-emitting diode applications. This work investigates the…
The spatially precise integration of arrays of micro-patterned two-dimensional (2D) crystals onto three-dimensionally structured Si/SiO$_2$ substrates represents an attractive strategy towards the low-cost system-on-chip integration of…
Manipulation of surface architecture of semiconducting nanowires with a control in surface polarity is one of the important objectives for nanowire based electronic and optoelectronic devices for commercialization. We report the growth of…
We recently reported on the first realization of ultraviolet photonic crystal laser based on zinc oxide [Appl. Phys. Lett. {\bf 85}, 3657 (2004)]. Here we present the details of structural design and its optimization. We develop a…
The combination of large thickness ($>3$ $\mu$m), large--area uniformity (75 mm diameter), high growth rate (up to 0.4 $\mu$m/min) in assemblies of complex--shaped nanowires on lithographically defined patterns has been achieved for the…
The emerging new paradigm of technologies, the internet of things, entails a process of device miniaturization to combine several functional components, such as sensors, actuators, and powering elements, in a single individual on-chip…
Rapid and reproducible assembly of aligned nanostructures on a wafer-scale is a crucial, yet one of the most challenging tasks in the incorporation of nanowires into integrated circuits. We present the synthesis of a periodic nanochannel…
In the last decades nanostructures have unlocked myriads of functionalities in nanophotonics by engineering light-matter interaction beyond what is possible with conventional bulk optics. The space of parameters available for design is…
The structure and dynamics of isolated nanosamples in free flight can be directly visualized via single-shot coherent diffractive imaging using the intense and short pulses of X-ray free-electron lasers. Wide-angle scattering images even…
Low dimensional materials provide the possibility of improved thermoelectric performance due to the additional length scale degree of freedom for engineering their electronic and thermal properties. As a result of suppressed phonon…
Aluminum nitride (AlN) is an extremely promising material for integrated photonics because of the combination of strong \c{hi}2 and \c{hi}3 nonlinearities. However, the intrinsic hardness of the material and charging effects during electron…
Room temperature growth of two-dimensional van der Waals (2D-vdW) materials is indispensable for state-of-the-art nanotechnology. The low temperature growth supersedes the requirement of elevated growth temperature accompanied with high…
Nanolaminated Al2O3/HfO2 thin films as well as single Al2O3 and HfO2 layers have been grown as gate dielectrics by Plasma Enhanced Atomic Layer Deposition (PEALD) technique on silicon carbide (4H-SiC) substrates. All the three dielectric…
Making a systematic effort, we have developed a single-crystalline ZnSnN2 on ZnO (0001) by reactive magnetron co-sputtering. Epitaxial growth was achieved at 350 C by co-sputtering from metal targets in nitrogen atmosphere, and confirmed by…
High surface area nanowire based architectures have been identified as important components for future optoelectronic nanodevices, solar cells, wettability coatings, gas sensors, and biofuel cells. Here we report on a novel urchin-inspired…