Related papers: Side Channel Attacks on STTRAM and Low-Overhead Co…
In modern systems, DRAM-based main memory is significantly slower than the processor. Consequently, processors spend a long time waiting to access data from main memory, making the long main memory access latency one of the most critical…
In recent years a new class of side-channel attacks has emerged. Instead of targeting device emissions during dynamic computation, adversaries now frequently exploit the leakage or response behaviour of integrated circuits in a static…
Evolving attacks on the vulnerabilities of the computing systems demand novel defense strategies to keep pace with newer attacks. This report discusses previous works on side-channel attacks (SCAs) and defenses for cache-targeted and…
Spin-Transfer Torque RAMs (STTRAMs) have been shown to offer much promise for implementing emerging cache architectures. This paper studies the viability of STTRAM caches for mobile workloads from the perspective of energy and latency.…
Storage Class Memory (SCM) is a class of memory technology which has recently become viable for use. Their namearises from the fact that they exhibit non-volatility of data, similar to secondary storage while also having latencies…
We present a new hardware-agnostic side-channel attack that targets one of the most fundamental software caches in modern computer systems: the operating system page cache. The page cache is a pure software cache that contains all…
Spin transfer torque magnetic random access memory (STT-MRAM) is considered as one of the most promising candidates to build up a true universal memory thanks to its fast write/read speed, infinite endurance and non-volatility. However the…
DRAM-based memory is a critical factor that creates a bottleneck on the system performance since the processor speed largely outperforms the DRAM latency. In this thesis, we develop a low-cost mechanism, called ChargeCache, which enables…
To defeat side-channel attacks, many recent countermeasures work by enforcing random run-time variability to the target computing platform in terms of clock jitters, frequency and voltage scaling, and phase shift, also combining the…
Sub/Near-threshold static random-access memory (SRAM) design is crucial for addressing the memory bottleneck in energy-constrained applications. However, the high integration density and reliability under process variations demand an…
As technology process node scales down, on-chip SRAM caches lose their efficiency because of their low scalability, high leakage power, and increasing rate of soft errors. Among emerging memory technologies, Spin-Transfer Torque Magnetic…
Various constraints of Static Random Access Memory (SRAM) are leading to consider new memory technologies as candidates for building on-chip shared last-level caches (SLLCs). Spin-Transfer Torque RAM (STT-RAM) is currently postulated as the…
Last-level cache side-channel attacks have been mostly demonstrated in highly-controlled, quiescent local environments. Hence, it is unclear whether such attacks are feasible in a production cloud environment. In the cloud, side channels…
With emerging storage-class memory (SCM) nearing commercialization, there is evidence that it will deliver the much-anticipated high density and access latencies within only a few factors of DRAM. Nevertheless, the latency-sensitive nature…
The code generation modules inside modern compilers such as GCC and LLVM, which use a limited number of CPU registers to store a large number of program variables, may introduce side-channel leaks even in software equipped with…
For a distributed last-level cache (LLC) in a large multicore chip, the access time to one LLC bank can significantly differ from that to another due to the difference in physical distance. In this paper, we successfully demonstrated a new…
The timing characteristics of cache, a high-speed storage between the fast CPU and the slowmemory, may reveal sensitive information of a program, thus allowing an adversary to conduct side-channel attacks. Existing methods for detecting…
Side-channel vulnerabilities pose an increasing threat to cryptographically protected devices. Consequently, it is crucial to observe information leakages through physical parameters such as power consumption and electromagnetic (EM)…
SRAM-based cache memory faces several scalability limitations in deep nanoscale technologies, e.g., high leakage current, low cell stability, and low density. Emerging Non-Volatile Memory (NVM) technologies have received lots of attention…
Shared caches are vulnerable to side channel attacks through contention in cache sets. Besides being a simple source of information leak, these side channels form useful gadgets for more sophisticated attacks that compromise the security of…