Related papers: Cache Bypassing and Checkpointing to Circumvent Da…

Spin Transfer Torque RAM (STTRAM) is a promising candidate for Last Level Cache (LLC) due to high endurance, high density and low leakage. One of the major disadvantages of STTRAM is high write latency and write current. Additionally, the…

Last level caches (LLCs) occupy a large chip-area and there size is expected to grow further to offset the limitations of memory bandwidth and speed. Due to high leakage consumption of SRAM device, caches designed with SRAM consume large…

Spin-Transfer Torque RAM (STTRAM) is a promising alternative to SRAM in on-chip caches due to several advantages. These advantages include non-volatility, low leakage, high integration density, and CMOS compatibility. Prior studies have…

As capacity and complexity of on-chip cache memory hierarchy increases, the service cost to the critical loads from Last Level Cache (LLC), which are frequently repeated, has become a major concern. The processor may stall for a…

In this paper, we present a novel cache design based on Multi-Level Cell Spin-Transfer Torque RAM (MLC STTRAM) that can dynamically adapt the set capacity and associativity to use efficiently the full potential of MLC STTRAM. We exploit the…

Spin-Transfer Torque RAM (STT-RAM) is widely considered a promising alternative to SRAM in the memory hierarchy due to STT-RAM's non-volatility, low leakage power, high density, and fast read speed. The STT-RAM's small feature size is…

Spin-Transfer Torque Magnetic RAM (STT-MRAM) as one of the most promising replacements for SRAMs in on-chip cache memories benefits from higher density and scalability, near-zero leakage power, and non-volatility, but its reliability is…

Spin-Transfer Torque Magnetic RAM (STT-MRAM) is known as the most promising replacement for SRAM technology in large Last-Level Caches (LLCs). Despite its high-density, non-volatility, near-zero leakage power, and immunity to radiation as…

Side-channel attacks on memory (SCAM) exploit unintended data leaks from memory subsystems to infer sensitive information, posing significant threats to system security. These attacks exploit vulnerabilities in memory access patterns, cache…

Spin-Transfer Torque RAMs (STTRAMs) have been shown to offer much promise for implementing emerging cache architectures. This paper studies the viability of STTRAM caches for mobile workloads from the perspective of energy and latency.…

Prior studies have shown that the retention time of the non-volatile spin-transfer torque RAM (STT-RAM) can be relaxed in order to reduce STT-RAM's write energy and latency. However, since different applications may require different…

As technology process node scales down, on-chip SRAM caches lose their efficiency because of their low scalability, high leakage power, and increasing rate of soft errors. Among emerging memory technologies, Spin-Transfer Torque Magnetic…

Due to its high density and close-to-SRAM read latency, spin transfer torque RAM (STT-RAM) is considered one of the most-promising emerging memory technologies for designing large last level caches (LLCs). However, in deep sub-micron…

Recent development in memory technologies has introduced Spin-Transfer Torque Magnetic RAM (STT-MRAM) as the most promising replacement for SRAMs in on-chip cache memories. Besides its lower leakage power, higher density, immunity to…

DRAM-based memory is a critical factor that creates a bottleneck on the system performance since the processor speed largely outperforms the DRAM latency. In this thesis, we develop a low-cost mechanism, called ChargeCache, which enables…

Caches are used to reduce the speed differential between the CPU and memory to improve the performance of modern processors. However, attackers can use contention-based cache timing attacks to steal sensitive information from victim…

In-memory computing is a promising approach to addressing the processor-memory data transfer bottleneck in computing systems. We propose Spin-Transfer Torque Compute-in-Memory (STT-CiM), a design for in-memory computing with Spin-Transfer…

In-memory computing promises to overcome the von Neumann bottleneck in computer systems by performing computations directly within the memory. Previous research has suggested using Spin-Transfer Torque RAM (STT-RAM) for in-memory computing…

Caches have been exploited to leak secret information due to the different times they take to handle memory accesses. Cache timing attacks include non-speculative cache side and covert channel attacks and cache-based speculative execution…

Various constraints of Static Random Access Memory (SRAM) are leading to consider new memory technologies as candidates for building on-chip shared last-level caches (SLLCs). Spin-Transfer Torque RAM (STT-RAM) is currently postulated as the…