Related papers: Conductance Quantization at zero magnetic field in…
We discuss electronic transport through a lateral quantum dot close to the singlet-triplet degeneracy in the case of a single conduction channel per lead. By applying the Numerical Renormalization Group, we obtain rigorous results for the…
Synergic effect of electronic correlation and spin-orbit coupling is an emerging topic in topological materials. Central to this rapidly developing area are the prototypes of strongly correlated heavy-fermion systems. Recently, some…
Resistive transport near a superconducting phase can arise from the motion of normal-state quasiparticles or that of vortices. The conductivity alone does not distinguish between these mechanisms. We propose an unambiguous method for…
We report a significant and persistent enhancement of the conductivity in free-standing non intentionnaly doped InAs nanowires upon irradiation in ultra high vacuum. Combining four-point probe transport measurements performed on nanowires…
We analyze transport of local magnetization and develop schemes to control transport behavior in finite spin-1/2 Heisenberg chains and spin-1/2 Heisenberg two-leg ladders at zero temperature. By adjusting parameters in the Hamiltonians,…
We report the experimental observation of conductance quantization in graphene nanoribbons, where 1D transport subbands are formed due to the lateral quantum confinement. We show that this quantization in graphene nanoribbons can be…
Topological superconductivity is a state of matter that can host Majorana modes, the building blocks of a topological quantum computer. Many experimental platforms predicted to show such a topological state rely on proximity-induced…
Semiconductor nanowires with strong spin-orbit coupling and proximity-induced s-wave superconductivity in an external magnetic field have been the most promising settings for approaches towards experimental evidence of topological Majorana…
We study hysteretic magnetoresistance in InSb nanowires due to stray magnetic fields from CoFe micromagnets. Devices without any ferromagnetic components show that the magnetoresistance of InSb nanowires commonly exhibits either a local…
The sp3d5s*-spin-orbit-coupled atomistic tight-binding (TB) model is used for the electronic structure calculation of Si nanowires (NWs), self consistently coupled to a 2D Poisson equation, solved in the cross section of the NW. Upon…
High-quality electrostatic gating is a fundamental ingredient for successful semiconducting device physics, and a key element of realizing clean quantum transport. Inspired by the widespread improvement of transport quality when…
Electron transport phenomena in disordered electron systems with spin-orbit coupling in two dimensions and below are studied numerically. The scaling hypothesis is checked by analyzing the scaling of the quasi-1D localization length. A…
Transport through semiconductor nanostructures is a quantum-coherent process. This paper focuses on systems in which the electron's dynamics is ballistic and the transport is dominated by the scattering from structure boundaries. Opposite…
Ability to understand and model the performance limits of nanowire transistors is the key to design of next generation devices. Here, we report studies on high-mobility junction-less gate-all-around nanowire field effect transistor with…
Ground state of the two-dimensional hard-core-boson model subjected to external magnetic field and quenched random chemical potential is studied numerically. In experiments, magnetic-field-tuned superconductor-insulator transition has…
We report the observation of a metal-insulator transition (MIT) in a two- dimensional electron gas (2DEG) in a Si/SiGe heterostructure at zero magnetic field. On going through the MIT we observe the corresponding evolution of the magnetic…
Hybrid superconductor-semiconductor materials are fueling research in mesoscopic physics and quantum technology. Recently demonstrated smooth $\beta$-Sn superconductor shells, due to the increased induced gap, are expanding the available…
Nanotransistors typically operate in far-from-equilibrium (FFE) conditions, that cannot be described neither by drift-diffusion, nor by purely ballistic models. In carbonbased nanotransistors, source and drain contacts are often…
The recent conjecture of a topologically-protected surface state in SmB$_6$ and the verification of robust surface conduction below 4 K have prompted a large effort to understand the surface states. Conventional Hall transport measurements…
We have investigated correlation between spin polarization and magnetotransport in a high mobility silicon inversion layer which shows the metal-insulator transition. Increase in the resistivity in a parallel magnetic field reaches…