Related papers: Uniaxially stressed germanium with fundamental dir…
Strain modulated electronic properties of Si/Ge core-shell nanowires along [110] direction were reported based on first principles density-functional theory calculations. Particularly, the energy dispersion relationship of the…
We present an experimental investigation of band-gap shrinkage in n-type GaN using photoluminescence spectroscopy, as a function of electron concentration and temperature. The observed systematic shift of the band-to-band transition energy…
We investigate the influence of a well-defined reversible biaxial strain <=0.12 % on the magnetization (M) of epitaxial ferromagnetic manganite films. M has been recorded depending on temperature, strain and magnetic field in 20 - 50 nm…
Infrared reflectivity measurements of CeSb under multi-extreme conditions (low temperatures, high pressures and high magnetic fields) were performed. A pseudo gap structure, which originates from the magnetic band folding effect,…
We theoretically investigate the effect of <100> uniaxial strain on a Ge-on-Si laser using deformation potentials. We predict a sudden and dramatic ~200x threshold reduction upon applying sufficient uniaxial tensile strain to the Ge gain…
We have performed a comprehensive first-principles study of the electronic and magnetic properties of two-dimensional (2D) transition-metal dichalcogenide (TMD) heterobilayers MX2/MoS2 (M = Mo, Cr, W, Fe, V; X = S, Se). For M = Mo, Cr, W;…
The magnetization of ferromagnetic LaCoO3 films grown epitaxially on piezoelectric substrates has been found to systematically decrease with the reduction of tensile strain. The magnetization change induced by the reversible strain…
Monolayer molybdenum disulfide ($\mathrm{MoS_2}$) under strain has many interesting properties and possible applications in technology. A recent experimental study examined the effect of strain on the bandgap of monolayer $\mathrm{MoS_2}$…
The direct magnetoelectric (ME) effect resulting from the polarization changes induced in a ferroelectric film by the application of a magnetic field to a ferromagnetic substrate is described using the nonlinear thermodynamic theory. It is…
Theoretical investigation of thermodynamic properties of electrically modulated monolayer graphene in the presence of a perpendicular magnetic field B is presented.This work is aimed at determining the modulation induced effects on the…
Due to their great potential in electronics, optoelectronics and piezoelectronics, Janus transition metal dichalcogenide (TMD) monolayers have attracted increasing research interest, the MoSSe of which with sandwiched S-Mo-Se structure has…
Before assessing the suitability of a semiconductor for specific applications, the first question to ask is whether it possesses a direct or indirect band gap. This distinction is fundamental, as the operation of devices such as…
The electronic band structure of the (Ga,Mn)As system has been one of the most intriguing problems in solid state physics over the past two decades. Determination of the band structure evolution with increasing Mn concentration is a key…
We propose a characterization tool for studies of the band structure of new materials promising for the observation of topological phase transitions. We show that a specific resonant feature in the entropy per electron dependence on the…
This work presents a theoretical study of the structural and electronic properties of bilayered silicon films under in-plane biaxial strain/stress using density functional theory. Atomic structures of the two-dimensional silicon films are…
In situ Eu-doped {ZnCdO/ZnO}30 multilayer systems were grown on p-type Si-substrates and on quartz substrates by plasma-assisted molecular beam epitaxy. Various Eu concentrations in the samples were achieved by controlling temperature of…
By means of atomistic tight-binding calculations, we investigate the effects of uniaxial strain on the electronic bandstructure of twisted graphene bilayer. We find that the bandstructure is dramatically deformed and the degeneracy of the…
In a magnetically driven electronic nematic state, an externally applied uniaxial strain rounds the nematic transition and increases the magnetic transition temperature. We study both effects in a simple classical model of the…
Unlike in many other semiconductors, the band gap of PbTe increases considerably with temperature. We compute the thermoelectric transport properties of n-type PbTe from first principles including the temperature variation of the electronic…
Capitalizing on the two-dimensional nature of superconductivity in field-effect doped C60, we show that it should be possible to increase the transition temperature Tc by applying uniaxial stress perpendicular to the gate electrode. This…