Related papers: Some Useful Relations for Analyzing Nanoscale MOSF…
We present data of transport measurements through a metallic nanobridge exhibiting diffusive electron transport. A logarithmic temperature dependence and a zero-bias anomaly in the differential conductance are observed, independent of…
In this paper the transport phenomena in On-Chip-Transmission Line are investigated . The transport equation are developed and solved. The near light speed phenomena in OCTL are investigated Key words: On-chip transmission line, transport…
State-of-the-art carbon nanotube field-effect transistors (CNFETs) behave as Schottky barrier (SB)-modulated transistors. It is known that vertical scaling of the gate oxide significantly improves the performance of these devices. However,…
We obtain the output and transfer characteristics of graphene field-effect transistors by using the charge-control model for the current, based on the solution of the Boltzmann equation in the field-dependent relaxation time approximation.…
The sensitive conductance change of semiconductor nanowires and carbon nanotubes in response to binding of charged molecules provide a novel sensing modality which is generally denoted as nanoFET sensors. In this paper, we study the scaling…
One of the fundamental properties of semiconductors is their ability to support highly tunable electric currents in the presence of electric fields or carrier concentration gradients. These properties are described by transport coefficients…
A nanoscale variable resistor consisting of a metal nanowire (active element), a dielectric, and a gate, is proposed. By means of the gate voltage, stochastic transitions between different conducting states of the nanowire can be induced,…
We develop a nanoscale dynamical mean-field theory (nano-DMFT) to deal with strong Coulomb interaction effects in physical systems that are intermediate in size between atoms and bulk materials, taking into account the tunneling into nearby…
Traditional transistors based on complementary metal-oxide-semiconductor (CMOS) and metal-oxide-semiconductor field-effect transistors (MOSFETs) are facing significant limitations as device scaling reaches the limits of Moore's Law. These…
We study the electromechanical transduction in nanoelectromechanical actuators and show that the differences in scaling for electrical and mechanical effects lead to an overall non-trivial scaling behavior. In particular, the previously…
Atomic-scale charge transport properties are not only of significant fundamental interest but also highly relevant for numerous technical applications. However, experimental methods which are capable of detecting charge transport at the…
We present a quantum-kinetic scheme for the calculation of non-equilibrium transport properties in nanoscale systems. The approach is based on a Liouville-master equation for a reduced density operator and represents a generalization of the…
Nanofluidic devices prompts unconventional ion transports appealing to energy and information technologies, thanks to the susceptibility of confined electric double layers (EDL) to various external physical fields. Although experimental…
In view of its local character, the semiclassical or Boltzmann theory is intrinsically unable to describe transport phenomena on ultrashort space and time scales, and to this purpose genuine quantum-transport approaches are imperative. By…
We study theoretically the quantum size effects in a one-dimensional semimetal by a Boltzmann transport equation. We derive analytic expressions for the electrical conductivity, Hall coefficient, magnetoresistance, and the thermoelectric…
We calculate magnetic field fluctuations above a conductor with a nonlocal response (spatial dispersion) and consider a large range of distances. The cross-over from ballistic to diffusive charge transport leads to reduced noise spectrum at…
The ability to actively regulate heat flow at the nanoscale could be a game changer for applications in thermal management and energy harvesting. Such a breakthrough could also enable the control of heat flow using thermal circuits, in a…
Many-body effects on tunneling of electrons in semiconductor nanowhiskers are investigated in a magnetic quantum limit. We consider the system with which bulk and edge states coexist. We show that interaction parameters of edge states are…
We show that carbon nanotube transistors exhibit scaling that is qualitatively different than conventional transistors. The performance depends in an unexpected way on both the thickness and the dielectric constant of the gate oxide.…
We adopt a stochastic approach to study the charge transport in transistors. In this approach, the hole and electron densities are ruled by diffusion-reaction stochastic partial differential equations satisfying local detailed balance…