Related papers: Evolution of perpendicular magnetized tunnel junct…
In the quest for reliable and power-efficient memristive devices, ferroelectric tunnel junctions are being investigated as potential candidates. CMOS-compatible ferroelectric hafnium oxides are at the forefront. However, in epitaxial tunnel…
Stable and switchable polarization of ferroelectric materials opens a possibility to electrically control their functional behavior. A particularly promising approach is to employ ferroelectric tunnel junctions where the polarization…
In the development of the first generation of sensors and memory chips based on spin-dependent tunneling through a thin trilayer, it has become clear that pinhole defects can have a deleterious effect on magnetoresistance. However, current…
We report on tunnelling magnetoresistance (TMR), current-voltage (IV) characteristics and low frequency noise in epitaxially grown Fe(110)/MgO(111)/Fe(110) magnetic tunnel junctions (MTJs) with dimensions from 2x2 to 20x20 um2. The…
Two-dimensional high-spin bipartite honeycomb networks, where anisotropy, competing exchange interactions, and spin fluctuations interplay, provide an alternative platform to test theoretical models that distinguish between classical and…
Exchange anisotropy in ferromagnet/antiferromagnet (FM/AF) films is usually introduced along the cooling field or FM magnetization direction. Here we investigate the dependence of the exchange anisotropy, loop bifurcation, and reversal…
The classical Heisenberg antiferromagnet on a triangular lattice with the single-ion anisotropy of the easy-axis type is theoretically investigated. The mean-field phase diagram in an external magnetic field is constructed. Three…
By means of electronic transport, we study the transverse magnetic anisotropy of an individual Fe$_4$ single-molecule magnet (SMM) embedded in a three-terminal junction. In particular, we determine in situ the transverse anisotropy of the…
We investigated the evolution of ferromagnetism in layered Fe$_3$GeTe$_2$ flakes under different pressures and temperatures using in situ magnetic circular dichroism (MCD) spectroscopy. We found that the rectangle shape of hysteretic loop…
We time-resolve the spin-transfer-torque-induced switching in perpendicularly magnetized tunnel junctions of diameters from 50 to 250 nm in the thermally activated regime. When the field and the spin-torque concur to favor the P to AP…
Two single-molecule magnets are coupled antiferromagnetically to form a supramolecule dimer. We study the coupling effect and tunneling process by means of the numerical exact diagonalization method, and apply them to the recently…
Magnetic materials that possess large bulk perpendicular magnetic anisotropy (PMA) are essential for the development of magnetic tunnel junctions (MTJs) used in future spintronic memory and logic devices. The addition of an…
We experimentally investigate the structural, magnetic and electrical transport properties of La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ based magnetic tunnel junctions with a SrSnO$_3$ barrier. Our results show that despite the large number of…
The magnetization process of the S=3/2 antiferromagnetic Heisenberg chain with the single-ion anisotropy D at T=0 is investigated by the exact diagonalization of finite clusters and finite-size scaling analyses. It is found that a…
The transport properties of magnetic tunnel junctions (MTJs) are very sensitive to interface modifications. In this work we investigate both experimentally and theoretically the effect of asymmetric barrier modifications on the bias…
We propose an analytical model devoted to explain the anisotropy of the electrical resistance observed below the critical temperature in granular high-Tc superconductors submitted to a magnetic field H. Reported experimental results…
Single-crystal synchrotron x-ray diffraction studies of CeFeAsO reveal strong anisotropy in the charge correlation lengths along or perpendicular to the in-plane antiferromagnetic (AFM) wave-vector at low temperatures, indicating an…
We study the conductance oscillation of an antiferromagnetic layer tunnel junction composed of antiferromagnetic topological insulators (MTIs) such as MnBi$_{2}$Te$_{4}$. In presence of an in-plane magnetic field, we find that the two…
We investigate thickness series of films of the Heusler alloy Co$_2$FeAl in order to study the effect of annealing on the interface with a MgO layer and on the bulk magnetic properties. Our results reveal that while the perpendicular…
Using first-principle density functional theory calculations combined with insight from a tight-binding representation, dynamical mean field theory, and linear response theory, we have extensively investigated the electronic structures and…