Related papers: Microwave Photoresistance in an Ultrahigh Quality …
To study the influence of microwave irradiation on two-dimensional electrons, we apply a method based on capacitance measurements in GaAs quantum well samples where the gate covers a central part of the layer. We find that the capacitance…
The temperature dependence of phonon-induced resistance oscillations has been investigated in two-dimensional electron system with moderate mobility at large filling factors at temperature range T = 7.4 - 25.4 K. The amplitude of…
The paper reviews a novel class of phenomena observed recently in the two-dimensional (2D) electron system formed on the free surface of liquid helium in the presence of a magnetic field directed normally and exposed to microwave radiation.…
We report on theoretical studies of recently discovered microwave-induced resistance oscillations and zero resistance states in Hall bars with two occupied subbands. In the same results, resistance presents a peculiar shape which appears to…
We report on temperature dependence of acoustic phonon-induced resistance oscillations in very high mobility two-dimensional electron systems. We observe that the temperature dependence is non-monotonic and that higher order oscillations…
It is shown that, although the major feature of the microwave-induced magnetoresistance oscillations in two-dimensional (2D) electron systems is insensitive to the behavior of the elastic scattering in the photon-assisted impurity…
The lifetime of two dimensional electrons in GaAs quantum wells, placed in weak quantizing magnetic fields, is measured using a simple transport method in broad range of temperatures from 0.3 K to 20 K. The temperature variations of the…
We report the observation of a remarkably strong microwave photoresistivity effect in a high-mobility two-dimensional electron system subject to a weak magnetic field and low temperature. The effect manifests itself as a giant…
We consider the displacement contribution to photoresistance in overlapping Landau levels at radiation frequencies much smaller than the cyclotron frequency. We show that in the limit of short-range disorder and high radiation power, this…
We discuss a possible origin of the recently discovered microwave-induced zero-resistance states in very-high-electron-mobility two-dimensional electron systems. We suggest a scenario, in which two mechanisms, bulk and edge, contribute to…
We study the evolution of low-temperature magnetoresistance in double quantum wells in the region below 1 Tesla as the applied current density increases. A flip of the magneto-intersubband oscillation peaks, which occurs as a result of the…
The temporal evolution of quantal Joule heating of 2D electrons in GaAs quantum well placed in quantizing magnetic fields is studied using a difference frequency method. The method is based on measurements of the electron conductivity…
We investigate phonon lifetimes in VO2 single crystals. We do so in the metallic state above the metal-insulator transition (MIT), where strong structural fluctuations are known to take place. By combining inelastic X-ray scattering and…
Effective electron mobilities are obtained by transport measurements on InAs nanowire field-effect transistors at temperatures ranging from 10-200 K. The mobility increases with temperature below ~ 30 - 50 K, and then decreases with…
For the immediate vicinity of the metal-insulator transition (MIT), data on the dependence of the resistivity rho on the charge carrier concentration n from an Si MOSFET experiment by Kravchenko et al. and from an AlAs quantum well study by…
The temperature and density dependence of the phase coherence time $\tau_\phi$ in high-mobility silicon inversion layers was determined from the magnetoresistivity due to weak localization. The upper temperature limit for single-electron…
The effect of microwave radiation on low-temperature electron magnetotransport in a square antidot lattice with a period of d = 0.8 micrometer based on a GaAs quantum well with two occupied energy subbands E1 and E2 is investigated. It is…
We report a magnetotransport study of an ultra-high mobility ($\bar{\mu}\approx 25\times 10^6$\,cm$^2$\,V$^{-1}$\,s$^{-1}$) $n$-type GaAs quantum well up to 33 T. A strong linear magnetoresistance (LMR) of the order of 10$^5$ % is observed…
We report on magnetotransport measurements in a two-dimensional (2D) electron gas subject to subterahertz radiation in the regime where Shubnikov-de Haas oscillations (SdHO) and microwave-induced resistance oscillations (MIRO) coexist over…
The microwave photoresistance of a two-dimensional topological insulator in a HgTe quantum well with an inverted spectrum has been experimentally studied under irradiation at frequencies of 110-169 GHz. Two mechanisms of formation of this…