Related papers: Electronic Spin Transport in Dual-Gated Bilayer Gr…
The theoretically predicted intrinsic spin relaxation time of up to 1 $\mu s$ in graphene along with extremely high mobilities makes it a promising material in spintronics. In spite of extensive experimental studies of spin relaxation and…
We study electronic, charge, and magnetic properties of twisted bilayer graphene with fillings $2\leq n\leq 6$ per moire unit cell within the recently introduced formulation of extended dynamical mean-field theory (E-DMFT) for…
We propose that the observed spin-relaxation in bilayer graphene is due to resonant scattering by magnetic impurities. We analyze a resonant scattering model due to adatoms on both dimer and non-dimer sites, finding that only the former…
Graphene has remarkable opportunities for spintronics due to its high mobility and long spin diffusion length, especially when encapsulated in hexagonal boron nitride (h-BN). Here, for the first time, we demonstrate gate-tunable spin…
We calculate the spin relaxation time of mobile electrons due to spin precession between random impurity scattering (D'yakonov-Perel' mechanism) in electrically gated bilayer graphene analytically and numerically. Due to the trigonal…
Electronic carriers in graphene show a high carrier mobility at room temperature. Thus, this system is widely viewed as a potential future charge-based high-speed electronic-material to complement- or replace- silicon. At the same time, the…
In this review we discuss the multifaceted problem of spin transport in hydrogenated graphene from a theoretical perspective. The current experimental findings suggest that hydrogenation can either increase or decrease spin lifetimes, which…
We report the first measurements of spin injection in to graphene through a 20 nm thick tungsten disulphide (WS$_2$) layer, along with a modified spin relaxation time ({\tau}s) in graphene in the WS$_2$ environment, via spin-valve and Hanle…
The unusual electronic properties of single-layer graphene make it a promising material system for fundamental advances in physics, and an attractive platform for new device technologies. Graphene's spin transport properties are expected to…
Recently, it has been shown that oxide barriers in graphene-based non-local spin-valve structures can be the bottleneck for spin transport. The barriers may cause spin dephasing during or right after electrical spin injection which limit…
We study the electronic transport properties of dual-gated bilayer graphene devices. We focus on the regime of low temperatures and high electric displacement fields, where we observe a clear exponential dependence of the resistance as a…
The manipulation of the electron spin degree of freedom is at the core of the spintronics paradigm, which offers the perspective of reduced power consumption, enabled by the decoupling of information processing from net charge transfer.…
A spin lifetime anisotropy between in-plane and out-of-plane spins in bilayer graphene (BLG) can be achieved by spin-orbit proximity coupling of graphene to transition metal dichalcogenides. This coupling reduces the in-plane spin lifetime…
We study the spin-resolved transport through magnetic nanostructures in monolayer and bilayer graphene. We take into account both the orbital effect of the inhomogeneous perpendicular magnetic field as well as the in-plane spin splitting…
The electronic conductance of graphene-based bilayer flake systems reveal different quantum interference effects, such as Fabry-P\'erot resonances and sharp Fano antiresonances on account of competing electronic paths through the device.…
We investigate effects of spin-orbit splitting on electronic transport in a spin valve consisting of a large quantum dot defined on a two-dimensional electron gas with two ferromagnetic contacts. In the presence of both structure inversion…
Using a two-dimensional finite-differences scheme to model spin transport in silicon devices with lateral geometry, we simulate the effects of spin relaxation at interfacial boundaries, i.e. the exposed top surface and at an…
In graphene spintronics, interaction of localized magnetic moments with the electron spins paves a new way to explore the underlying spin relaxation mechanism. A self-assembled layer of organic cobalt-porphyrin (CoPP) molecules on graphene…
Graphene grown by chemical vapor deposition (CVD) is the most promising material for industrial-scale applications based on graphene monolayers. It also holds promise for spintronics; despite being polycrystalline, spin transport in CVD…
Electron spin relaxation due to the D'yakonov-Perel' mechanism is investigated in bilayer graphene with only the lowest conduction band being relevant. The spin-orbit coupling is constructed from the symmetry group analysis with the…