Related papers: Valley and spin pump by scattering at non-magnetic…
Valleytronics is rapidly emerging as an exciting area of basic and applied research. In two dimensional systems, valley polarisation can dramatically modify physical properties through electron-electron interactions as demonstrated by such…
The band structure of transition metal dichalcogenides (TMDCs) with valence band edges at different locations in the momentum space could be harnessed to build devices that operate relying on the valley degree of freedom. To realize such…
Valleytronics targets the exploitation of the additional degrees of freedom in materials where the energy of the carriers may assume several equal minimum values (valleys) at non-equivalent points of the reciprocal space. In single layers…
Memory or transistor devices based on electron's spin rather than its charge degree of freedom offer certain distinct advantages and comprise a cornerstone of spintronics. Recent years have witnessed the emergence of a new field,…
Electronic and spintronic devices rely on the fact that free charge carriers in solids carry electric charge and spin, respectively. There are, however, other properties of charge carriers that might be exploited in new families of devices.…
A theory of the valley and spin Hall effects and resulting accumulation of the valley and spin polarization is developed for ultraclean channels made of two-dimensional semiconductors where the electron mean free path due to the residual…
Valley, the energy extrema in the electronic band structure at momentum space, is regarded as a new degree of freedom of electrons, in addition to charge and spin. The studies focused on valley degree of freedom now form an emerging field…
Valley, as a new degree of freedom for electrons, has drawn considerable attention due to its significant potential for encoding and storing information. Lifting the energy degeneracy to achieve valley polarization is necessary for…
Valleytronics rooted in the valley degree of freedom is of both theoretical and technological importance as it offers additional opportunities for information storage and electronic, magnetic and optical switches. In analogy to…
We develop the theory of the spin and valley Hall effects in two-dimensional systems caused by asymmetric -- skew -- scattering of the quasiparticles. The collision integral is derived in the third order in the particle-particle interaction…
Manipulating the valley degree of freedom to encode information for potential valleytronic devices has ignited a new direction in solid-state physics. A significant, fundamental challenge in the field of valleytronics is how to generate and…
Valleytronics is one of the breaking-through to the technology of electronics, which provides a new degree of freedom to manipulate the properties of electrons. Combining DFT calculations, optical absorption analysis and the linear…
Electrons in two-dimensional materials possess an additional quantum attribute, the valley pseudospin, labelled as $\mathbf{K}$ and $\mathbf{K}^{\prime}$ -- analogous to the spin up and spin down. The majority of research to achieve…
Underpinning the field of "valleytronics" is the coupling of the helicity of circularly polarized light to the valley degree of freedom, and this remains the only known lightform to exhibit this remarkable effect. Here we show that on…
We theoretically study spin and valley transport in a transition-metal dichalcogenide(TMDC)/ferromagnet heterostructure under a perpendicular magnetic field. We find that microwave-driven spin pumping induces a valley-selective spin…
In this Letter, a tunable valley polarization is investigated for honeycomb systems with broken inversion symmetry such as transition-metal dichalcogenide MX2 (M = Mo, W; X = S, Se) monolayers through elliptical pumping. As compared to…
The coherent manipulation of spin and pseudospin underlies existing and emerging quantum technologies, including NMR, quantum communication, and quantum computation. Valley polarization, associated with the occupancy of degenerate, but…
Sixfold-degenerate valleys in Si have attracted considerable attention for valleytronics application. Using optical pump-terahertz (THz) probe spectroscopy, we study the dynamics of valley polarization in bulk Si(001) at room temperature.…
We test the valley-filtering capabilities of a quantum dot inscribed by locally straining an $\alpha$-$\mathcal{T}_3$ lattice. Specifically, we consider an out-of-plane Gaussian bump in the center of a four-terminal configuration and…
The valley degree of freedom of electrons in materials promises routes toward energy-efficient information storage with enticing prospects towards quantum information processing. Current challenges in utilizing valley polarization are…