Related papers: Electrical control of intervalley scattering in gr…
Intervalley scattering involves microscopic processes that electrons are scattered by atomic-scale defects on nanometer length scales. Although central to our understanding of electronic properties of materials, direct characterization and…
We discuss the effect of certain types of static disorder, like that induced by curvature or topological defects, on the quantum correction to the conductivity in graphene. We find that when the intervalley scattering time is long or…
The electron scattering by the short-range defects in the monolayer graphene is considered in the framework of the flatland model. We analyze the effect of this scattering on the electronic resistivity of the monolayer graphene (direct…
Early experiments on alkali-doped graphene demonstrated that the dopant adatoms modify the conductivity of graphene significantly, as extra carriers enhance conductivity while Coulomb scattering off the adatoms suppresses it. However,…
We analyze the scattering from one-dimensional defects in intrinsic graphene. The Coulomb repulsion between electrons is found to be able to induce singularities of such scattering at zero temperature as in one-dimensional conductors. In…
The effect of Coulomb scattering on graphene conductivity in field effect transistor structures is discussed. Inter-particle scattering (electron-electron, hole-hole, and electron-hole) and scattering on charged defects are taken into…
We consider a problem of obtaining information about the scattering potentials of the monolayer graphene sample using available experimental data on its resistance. We have in mind a development of the study describing super-high mobility…
Intervalley charged-impurity scattering processes are examined. It is found that the scattering probability is enhanced due to the Coulomb interaction with the impurity by the Sommerfield factor $F_Z\propto \epsilon^{2\sqrt{1-4g^2}-2}$,…
We review the physics of charged impurities in the vicinity of graphene. The long-range nature of Coulomb impurities affects both the nature of the ground state density profile as well as graphene's transport properties. We discuss the…
A gate induced insulating behavior at zero magnetic field is observed in a high mobility suspended monolayer graphene near the charge neutrality point. The graphene device initially cleaned by a current annealing technique was undergone a…
We analyze the scattering sector of the Hamiltonians for both gapless and gapped graphene in the presence of a charge impurity using the 2D Dirac equation, which is applicable in the long wavelength limit. We show that for certain range of…
Graphene with high carrier mobility \mu\ is required both for graphene-based electronic devices and for the investigation of the fundamental properties of graphene's Dirac fermions. It is largely accepted that the mobility-limiting factor…
We discuss various scattering mechanisms for Dirac fermions in single-layer graphene. It is shown that scattering on a short-range potential (due to, for example, neutral impurities) is mostly irrelevant for electronic quality of graphene,…
We analyze the inelastic electron-electron scattering in undoped graphene within the Keldysh diagrammatic approach. We demonstrate that finite temperature strongly affects the screening properties of graphene, which, in turn, influences the…
It is shown that a ``vacuum polarization'' induced by Coulomb potential in graphene leads to a strong suppression of electric charges even for undoped case (no charge carriers). A standard linear response theory is therefore not applicable…
Atomically precise tailoring of graphene can enable unusual transport pathways and new nanometer-scale functional devices. Here we describe a recipe for the controlled production of highly regular "5-5-8" line defects in graphene by means…
We report several quantum interference effects in graphene grown by chemical vapor deposition. A crossover between weak localization and weak antilocalization effects is observed when varying the gate voltage and we discuss the underlying…
We analyze the competing effects of moderate to strong Coulomb electron-electron interactions and weak quenched disorder in graphene. Using a one-loop renormalization group calculation controlled within the large-N approximation, we…
The ground-state and the transport properties of graphene subject to the potential of in-plane charged impurities are studied. The screening of the impurity potential is shown to be nonlinear, producing a fractal structure of electron and…
We study the distribution of vacuum polarization charge induced by a Coulomb impurity in massive graphene. By analytically computing the polarization function, we show that the charge density is distributed in space in a non-trivial…