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A possible mechanism for the formation of a 90{\deg} misfit dislocation at the Ge/Si(001) interface through homogeneous nucleation is identified from atomic scale calculations where a minimum energy path connecting the coherent epitaxial…

An analysis of the network defined by the potential energy minima of multi-atomic systems and their connectivity via reaction pathways that go through transition states allows to understand important characteristics like thermodynamic,…

Materials Science · Physics 2016-08-03 Bastian Schaefer , Stefan Goedecker

Popular methods for identifying transition paths between energy minima, such as the nudged elastic band and string methods, typically do not incorporate potential energy curvature information, leading to slow relaxation to the minimum…

Computational Physics · Physics 2019-03-11 Stela Makri , Christoph Ortner , James R. Kermode

We study numerically the minimum energy path and energy barriers for dislocation nucleation in a two-dimensional atomistic model of strained epitaxial layers on a substrate with lattice misfit. Stress relaxation processes from coherent to…

Materials Science · Physics 2009-11-07 O. Trushin , E. Granato , S. C. Ying , P. Salo , T. Ala-Nissila

We study numerically the energetics and atomic mechanisms of misfit dislocation nucleation and stress relaxation in a two-dimensional atomistic model of strained epitaxial layers on a substrate with lattice misfit. Relaxation processes from…

Materials Science · Physics 2009-11-10 O. Trushin , E. Granato , S. C. Ying , P. Salo , T. Ala-Nissila

The high lattice mismatched SiC/Si(001) interface was investigated by means of combined classical and ab initio molecular dynamics. Among the several configurations analyzed, a dislocation network pinned at the interface was found to be the…

Materials Science · Physics 2007-09-12 Giancarlo Cicero , Laurent Pizzagalli , Alessandra Catellani

We performed classical molecular dynamics simulations to investigate, from an atomistic point of view, the formation of dislocations during the epitaxial growth of Ge on Si. We show that simulations at 900 and 1000 K with deposition rates…

Materials Science · Physics 2025-09-19 Luis Martín-Encinar , Luis A. Marqués , Iván Santos , Lourdes Pelaz

Density functional theory calculations have been performed to study the structures and energetics of coherent and semicoherent TiC/Fe interfaces. A systematic method for determining the interfacial energy for the semicoherent interface with…

Materials Science · Physics 2018-04-10 Song Lu , John Ågren , Levente Vitos

Atomic-scale calculations for the dynamics of the 90$^0$ partial glide dislocation in silicon are made using the effective-medium tight-binding theory. Kink formation and migration energies for the reconstructed partial dislocation are…

Materials Science · Physics 2008-02-03 K. Stokbro , L. B. Hansen , B. I. Lundqvist

Using first principles, classical potentials, and elasticity theory, we investigated the structure of a semiconductor/semiconductor interface with a high lattice mismatch, SiC/Si(001). Among several tested possible configurations, a…

Materials Science · Physics 2007-09-12 Laurent Pizzagalli , Giancarlo Cicero , Alessandra Catellani

Finding complex reaction and transformation pathways, involving many intermediate states, is in general not possible on the DFT level with existing simulation methods due to the very large number of required energy and force evaluations.…

Computational Physics · Physics 2019-11-20 Deb Sankar De , Marco Krummenacher , Bastian Schaefer , Stefan Goedecker

In this paper we have investigated, through computer simulations, dislocation nucleation and dislocation dynamics in a heterostructure system with the lattice-mismatch interface, i.e. a system with internal strain. In particular, we have…

Materials Science · Physics 2018-04-20 Marco Patriarca , Antti Kuronen , Kimmo Kaski

Understanding how dislocation structures vary with grain boundary (GB) characters enables accurate controls of interfacial nano-patterns. In this atomistic study, we report the structure-property correlations of Si (001) small angle mixed…

Materials Science · Physics 2024-03-11 Wei Wan , Changxin Tang

We report a new algorithm for constructing pathways between local minima that involve a large number of intervening transition states on the potential energy surface. A significant improvement in efficiency has been achieved by changing the…

Other Condensed Matter · Physics 2009-11-11 Joanne M. Carr , Semen A. Trygubenko , David J. Wales

Minimum energy paths for transitions such as atomic and/or spin rearrangements in thermalized systems are the transition paths of largest statistical weight. Such paths are frequently calculated using the nudged elastic band method, where…

(a+c) dislocations in hexagonal materials are typically observed to be dissociated into partial dislocations. Edge (a+c) dislocations are introduced into (0001) nitride semiconductor layers by the process of plastic relaxation. As there is…

Applied Physics · Physics 2023-10-19 J. Smalc-Koziorowska , J. Moneta , G. Muziol , W. Chrominski , R. Kernke , M. Albrecht , T. Schulz , I. Belabbas

Dislocation dynamic is a typically gradient flow problem, and most of work solves it just as ODE, which means that the interacting energy of dislocations is ignored. We take the interaction energy into account and use it to introduce new…

Materials Science · Physics 2022-11-30 Yuntong Huang , Shuyang Dai

In this work we model the evolution of strain energy during different growth stages of heterostructure nanowires. We find that the minimum energy configuration changes abruptly from fully elastically strained to partially relaxed due to…

Materials Science · Physics 2023-08-09 Thue Christian Thann , Tobias Særkjær , Sergej Schuwalow , Peter Krogstrup

Physical systems evolve from one state to another along paths of least energy barrier. Without a priori knowledge of the energy landscape, multidimensional search methods aim to find such minimum energy pathways between the initial and…

Experiments and simulations both have verified the presence of <100> dislocations in irradiated W. It is essential to know the properties and behavior of these defects to study the evolution of microstructures at higher scales. We study the…

Materials Science · Physics 2025-09-05 Utkarsh Bhardwaj , Andread E. Sand , Manoj Warrier
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