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Related papers: Repairing atomic vacancies in single-layer MoSe2 f…

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Structural distortions and imperfections are a crucial aspect of materials science, on the macroscopic scale providing strength, but also enhancing corrosion and reducing electrical and thermal conductivity. At the nanometre scale,…

Superconductivity · Physics 2024-05-08 A. Mesaros , G. D. Gu , F. Massee

We demonstrate a device geometry for single-molecule electronics experiments that combines both the ability to adjust the spacing between the electrodes mechanically and the ability to shift the energy levels in the molecule using a gate…

Mesoscale and Nanoscale Physics · Physics 2015-06-24 A. R. Champagne , A. N. Pasupathy , D. C. Ralph

Using first-principles atomistic simulations, we study the response of atomically-thin layers of transition metal dichalcogenides (TMDs) - a new class of two-dimensional inorganic materials with unique electronic properties - to electron…

Field-effect transistors based on molybdenum disulfide (MoS$_2$) exhibit a hysteresis in their transfer characteristics, which can be utilized to realize 2D memory devices. This hysteresis has been attributed to charge trapping due to…

Various types of defects in MoS2 monolayers and their influence on the electronic structure and transport properties have been studied using the Density-Functional based Tight-Binding method in conjunction with the Green's Function…

Materials Science · Physics 2014-03-04 Mahdi Ghorbani-Asl , Andrey N. Enyashin , Agnisezka Kuc , Gotthard Seifert , Thomas Heine

Defect-carrier interaction in transition metal dichalcogenides (TMDs) play important roles in carrier relaxation dynamics and carrier transport, which determines the performance of electronic devices. With femtosecond laser time-resolved…

Materials Science · Physics 2018-01-09 Ke Chen , Anupam Roy , Amritesh Rai , Hema C P Movva , Xianghai Meng , Feng He , Sanjay Banerjee , Yaguo Wang

Structural, electronic and thermodynamic properties of native defects in GaS and GaSe monolayers are investigated by means of accurate ab-initio calculations. Based on their charge transition levels we assess the influence of the studied…

Materials Science · Physics 2023-04-27 Daniel Barragan-Yani , Jonathan M. Polfus , Ludger Wirtz

We present a detailed first principles density functional theory study of intrinsic and extrinsic point defects in monolayer (ML) WSe2. Among the intrinsic point defects, Se vacancies (Sevac) have the lowest formation energy (disregarding…

Materials Science · Physics 2019-01-17 Yu Jie Zheng , Su Ying Quek

Electrically interfacing atomically thin transition metal dichalcogenide semiconductors (TMDSCs) with metal leads is challenging because of undesired interface barriers, which have drastically constrained the electrical performance of TMDSC…

Suspended monolayer transition metal-dichalcogenides (TMD) are membranes that combine ultra-low mass and exceptional optical properties, making them intriguing materials for opto-mechanical applications. However, the low measured quality…

A simple exact-exchange density-functional method for a quasi-two-dimensional electron gas with variable density is presented. An analytical expression for the exact-exchange potential with only one occupied subband is provided, without…

Condensed Matter · Physics 2009-11-07 F. A. Reboredo , C. R. Proetto

Epitaxial engineering of solid-state heterointerfaces is a leading avenue to realizing enhanced or novel electronic states of matter. As a recent example, bulk FeSe is an unconventional superconductor with a modest transition temperature…

Superconductivity · Physics 2017-03-29 Dennis Huang , Jennifer E. Hoffman

Structural, magnetic, electrical transport, and heat capacity data are reported for single crystals of TlFe1.6Se2. This compound crystallizes in a tetragonal structure similar to the ThCr2Si2 structure, but with vacancies in the Fe layer.…

The metastable 1$T'$ phase of layered transition metal dichalcogenides has recently attracted considerable interest due to electronic properties, possible topological electronic phases and catalytic activity. We report a comprehensive…

Materials Science · Physics 2018-04-13 Michele Pizzochero , Oleg V. Yazyev

Measurements of magnetotransport in SnTe/PbTe heterojunctions grown by the MBE technique on (001) undoped CdTe substrates were performed. At low magnetic fields, quantum corrections to conductivity were observed that may be attributed to…

Mesoscale and Nanoscale Physics · Physics 2023-01-23 D. Śnieżek , Jarosław Wróbel , M. Kojdecki , C. Śliwa , S. Schreyeck , K. Brunner , L. W. Molenkamp , G. Karczewski , Jerzy Wróbel

This work reports the electrical transport and temperature-dependent photoconductivity in tungsten diselenide (WSe2) thin films. The electrical conductivity analysis shows the presence of the three regions with temperature variation. At…

We study a one-dimensional chain of identical atoms with two electronic orbitals and two electrons per atom, subject to an external oscillating pressure that periodically modulates the lattice spacing. This leads to time-dependent intra-…

Mesoscale and Nanoscale Physics · Physics 2025-11-18 Anwesha Chattopadhyay

Heat Capacity of needle-like [length=5mm, diameter=1 mm] $\beta$-FeSi$_{2}$ single crystal, grown by chemical vapor transport has been measured. Two anomalies are found, a broad deviation centered around 160 K and a clear deviation at a…

Materials Science · Physics 2009-11-11 Sher Alam , T. Nagai , Y. Matsui

We present a detailed low temperature scanning tunneling microscopy study of the commensurate charge density wave (CDW) in 1$T$-TiSe$_2$ in the presence of single atom defects. We find no significant modification of the CDW lattice in…

Atomically thin layers of transition-metal dicalcogenides (TMDCs) are often known to be metastable in the ambient atmosphere. Understanding the mechanism of degradation is essential for their future applications in nanoelectronics, and thus…

Mesoscale and Nanoscale Physics · Physics 2017-01-31 W. L. Liu , M. L. Chen , X. X. Li , S. Dubey , T. Xiong , Z. M. Dai , J. Yin , W. L. Guo , J. L. Ma , Y. N. Chen , J. Tan , D. Li , Z. H. Wang , W. Li , V. Bouchiat , D. M. Sun , Z. Han , Z. D. Zhang