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Fluctuation of Coulomb blockade peak spacings in large two-dimensional semiconductor quantum dots are studied within a model based on the electrostatics of several electron islands among which there are random inductive and capacitive…
We present theoretical results concerning inelastic light (Raman) scattering from semiconductor quantum dots. The characteristics of each dot state (whether it is a collective or single-particle excitation, its multipolarity, and its spin)…
We present a set of concrete and realistic ideas for the implementation of a small-scale quantum computer using electron spins in lateral GaAs/AlGaAs quantum dots. Initialization is based on leads in the quantum Hall regime with tunable…
The approximate representation of a quantum solid as an equivalent composite semi-classical solid is considered for insulating materials. The composite is comprised of point ions moving on a potential energy surface. In the classical bulk…
Silicon has many attractive properties for quantum computing, and the quantum dot architecture is appealing because of its controllability and scalability. However, the multiple valleys in the silicon conduction band are potentially a…
Spins based in silicon provide one of the most promising architectures for quantum computing. A scalable design for silicon-germanium quantum dot qubits is presented. The design incorporates vertical and lateral tunneling. Simulations of a…
We have experimentally investigated the hole states in a gated vertical strained Si/SiGe quantum dot. We demonstrate the inhomogeneous strain relaxation on the lateral surface creates a ring-like potential near the perimeter of the dot,…
The small size and excellent integrability of silicon metal-oxide-semiconductor (SiMOS) quantum dot spin qubits make them an attractive system for mass-manufacturable, scaled-up quantum processors. Furthermore, classical control electronics…
We investigate the spin relaxation induced by acoustic phonons in the presence of spin-orbit interactions in single electron Si/SiGe lateral coupled quantum dots. The relaxation rates are computed numerically in single and double quantum…
We use spin-density-functional theory to study the spacing between conductance peaks and the ground-state spin of 2D model quantum dots with up to 200 electrons. Distributions for different ranges of electron number are obtained in both…
Built-in electrostatic fields in Zincblende quantum dots originate mainly from - (1) the fundamental crystal atomicity and the interfaces between two dissimilar materials, (2) the strain relaxation, and (3) the piezoelectric polarization.…
We study the low energy states of finite spin chains with isotropic (Heisenberg) and anisotropic (XY and Ising-like) exchange interaction with uniform and non-uniform coupling constants. We show that for an odd number of sites a spin…
The electronic structure of an infinite 1D array of vertically coupled InAs/GaAs strained quantum dots is calculated using an eight-band strain-dependent k-dot-p Hamiltonian. The coupled dots form a unique quantum wire structure in which…
Direct phonon spin-lattice relaxation of an electron qubit bound by a donor impurity or quantum dot in SiGe heterostructures is investigated. The aim is to evaluate the importance of decoherence from this mechanism in several important…
We calculate the dynamical spin structure factor of spin waves for weakly coupled stripes. At low energy, the spin wave cone intensity is strongly peaked on the inner branches. As energy is increased, there is a saddlepoint followed by a…
We provide new examples of pure entangled systems related to cluster state quantum computation that can be efficiently simulated classically. In cluster state quantum computation input qubits are initialised in the `equator' of the Bloch…
The long term scaling prospects for solid-state quantum computing architectures relies heavily on the ability to simply and reliably measure and control the coherent electron interaction strength, known as the tunnel coupling, $t_c$. Here,…
An analytical expression of the strain distribution due to lattice mismatch is obtained in an infinite isotropic elastic medium (a matrix) with a three-dimensional polyhedron-shaped inclusion (a quantum dot). The expression was obtained…
The remarkable properties of silicon have made it the central material for the fabrication of current microelectronic devices. Silicon's fundamental properties also make it an attractive option for the development of devices for spintronics…
The optical properties of excitons confined in initially-unstrained GaAs/AlGaAs quantum dots are studied as a function of a variable quasi-uniaxial stress. To allow the validation of state-of-the-art computational tools for describing the…